a) Design the bias circuit for the transistor in figure A (find Rc, RB „RE) for given values: VCE = 4V, Ic =3 mA and the voltage value on the resistor RE is 2 V and hFE is 100. Vcc -10 V RB RC b) If the hFE of transistor become 200 by the effect of temperature what will be new Ic value with resistor values you found in a. RE Figure A 1 KN 1 KN 22 KN 4.7 KN ↑. Vcc Vcc VEE VCB VBE BE VCB VEE Figure 1 Figure 2 c) Were the input and output characteristics of BJTS obtained similar like literature? d) What are the main concepts in the preparation of BJT bias circuit?

a) Design the bias circuit for the transistor in figure A (find Rc, RB „RE) for given values: VCE = 4V, Ic =3 mA and the voltage value on the resistor RE is 2 V and hFE is 100. Vcc -10 V RB RC b) If the hFE of transistor become 200 by the effect of temperature what will be new Ic value with resistor values you found in a. RE Figure A 1 KN 1 KN 22 KN 4.7 KN ↑. Vcc Vcc VEE VCB VBE BE VCB VEE Figure 1 Figure 2 c) Were the input and output characteristics of BJTS obtained similar like literature? d) What are the main concepts in the preparation of BJT bias circuit?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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