A common emitter BJT circuit is designed as shown in Fig. 4(a). The output load line and defined Q-point of the circuit are shown in Fig. Determine the required values of Vcc, Rc and RB. Assume that VBE (on)=0.7 .V Vcc 12 c(mA) 10 RC - Ig3 = 30 µA 8 @point RB - I92 = 20 µA VCE 4 - Ig1 = 10 µA VBE Ves Veæ(V) = 10 V 5 10 15 20 25 إجابتك

A common emitter BJT circuit is designed as shown in Fig. 4(a). The output load line and defined Q-point of the circuit are shown in Fig. Determine the required values of Vcc, Rc and RB. Assume that VBE (on)=0.7 .V Vcc 12 c(mA) 10 RC - Ig3 = 30 µA 8 @point RB - I92 = 20 µA VCE 4 - Ig1 = 10 µA VBE Ves Veæ(V) = 10 V 5 10 15 20 25 إجابتك

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

The full-load copper loss of a transformer is 1600 W. At half-load, the copper loss will be O a. 1600 W b. 6400 W O c. 400 W d. 800 W 4 11
Q10
)For the common-emitter, first draw characteristics of IC and VCE and then find the dc beta at an operating point VCE=4V and ICE =4 mA (b) Find the value of α corresponding to this operating point. (c) At the VCE =6V and IC =2mA (d) Calculate the approximate value of I CBO using the dc beta value obtained in part (a)
/ Design a circuit using an n-channel E-MOSFET with the following datasheet specifications: Ixon) = 500 mA at VGS 10 V and VGS(h) = 1 V. Use a (+12 V) dc supply voltage with voltage divider bias. The voltage at the drain with respect to ground is to be (+7.78 V), the voltage at the source with respect to the ground is to be (+2.1 V), and the maximum current from the supply is to be 21.1 mA.
. HAND WRITTEN PLEASE
4. Calculate the resistance Re for this circuit to drive the transistor into saturation. The BJT operates in the saturation region when its collector current is not dependent on the base current and has reached a maximum. BJT when saturated, VCE(sat) ≤ 0.2 V. $RB Is +10v Jafalka VCE = 0.2V B=150
Q4. The BJT in the common-base (CB) amplifier in Figure 4 has +12 Figure 4 s kn B=100, VE = 0.7 V. in the active mode. The coupling capacitors are very large. The Ve output resistance r, of the transistor can be neglected. 20 k2 (a) For I = 1.2 mA, calculate the bias values of the collector voltage Vc and the emitter voltage VE ( 0.5 k2 VE (b) Calculate the small-signal parameters ( gm, ", ) and draw the small-signal equivalent cireuit of the amplifier. V sig (10 (c) Find the overall voltage gain G, defined as G, V. sig
Figure 1 shows the transfer curves of two different type of FET transistors. The transfer curve of transistor A is shown in Figure 1(a) that has ID(on) = 5mA and VGS(on) = 7V. Meanwhile, the transfer curve of transistor B is shown in Figure 1(b). (i) Determine the type of transistor A and B. (ii) State the correct equation for the transfer curve A and B. (iii) Sketch the basic construction of transistor A and B and label each part correctly. (iv) Briefly discuss one similarity in terms of the construction between the transistors A and B. 4'o (mA) D (mA) 8 12 11 7 10 5 4 6. 3 2 1 2 3 4 5 6. 7 8 VGS 1 -5 -4 -3 -2 -1 VGs Figure 1(a) Figure 1(b)
For the circuit given below, suppose that RB = 230k2, RE1 = 4002, RE2 = 02, Rc = 1002 and Vcc = +6V. Given that the BJT's have B=100, verify that the transistors are in active region by finding icı, VCE1, İc2 and VCE2. Active region: VBe = 0.7V Q+Vc RB Rc Q1 Q2 Re1 RE2
solve
|vp| 1V. For For the PMOS transistor in the circuit shown in Figure, K, = 8μA/V², W/L = 25, and = 100μA, find the voltages VSD and VSG for R = 10k. For what = VSG? = value of R is VSD +10 V VSG VSD
Find the emitter current and VCE in the following circuit constructed with an npn BJT having a ß of 100. Assume that VBE=0.7 V if the junction is forward biased and VCESAT=0.2 V.Ignore the early effect.