= A CE amplifier is made using a PNP transistor. Instead of a resistor, the load is an NPN transistor. Both transistors have Is = 5451 aA, while VA,n 78 V and VA,p = 234 V. The NPN is biased with 0.53 V such that the large signal swing of the output is maximized. VIN- 1.8 V VBIAS Q2 2. Compute for the value of Ic. 0100 μA 03.9 μA O100 NA 03.9 nA 3. What is the value of R₂? Use ß = 45. O300 ΚΩ 0100 GO 060 MQ O∞ VOUT PNP-based CE with NPN-based Active Load

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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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transistor. Both transistors have Is 5451 aA, while VA,n
A CE amplifier is made using a PNP transistor. Instead of a resistor, the load is an NPN
78 V and VA,p
= 234 V.
The NPN is biased with 0.53 V such that the large signal swing of the output is
maximized.
-
∞
VINO
VBIAS
2. Compute for the value of Ic.
0100 μA
03.9 μA
O100 NA
03.9 nA
3. What is the value of R₂? Use ß = 45.
Ο300 ΚΩ
0100 GO
Ο60 ΜΩ
1.8 V
Q2
VOUT
-
PNP-based CE with NPN-based Active Load
Transcribed Image Text:transistor. Both transistors have Is 5451 aA, while VA,n A CE amplifier is made using a PNP transistor. Instead of a resistor, the load is an NPN 78 V and VA,p = 234 V. The NPN is biased with 0.53 V such that the large signal swing of the output is maximized. - ∞ VINO VBIAS 2. Compute for the value of Ic. 0100 μA 03.9 μA O100 NA 03.9 nA 3. What is the value of R₂? Use ß = 45. Ο300 ΚΩ 0100 GO Ο60 ΜΩ 1.8 V Q2 VOUT - PNP-based CE with NPN-based Active Load
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