Date0317599628)A battery of emif 4V and grternal.xesistance 2n s joined to a desistor of 8 2calculate the terminal potential difference. Whatadditional xesistance in sedies with 8-2 sesistorWould produce a texminal pd of 3.6V?Taacher's Signalure

Given, A battery of EMF 4 V and internal resistance 2 Ω is joined to a resistor 8 Ω,

A battery of em.f 4V and prternal. xesistance 2.n is joined to a desistor of 82 calculate the terminal potential diffexence. What additional xesisfance in sedies with 8-2 desistor Would produce a texminal p.d of 3.6V?

A battery of em.f 4V and prternal. xesistance 2.n is joined to a desistor of 82 calculate the terminal potential diffexence. What additional xesisfance in sedies with 8-2 desistor Would produce a texminal p.d of 3.6V?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.

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Date
03175996
28)
A battery of emif 4V and grternal.
xesistance 2n s joined to a desistor of 8 2
calculate the terminal potential difference. What
additional xesistance in sedies with 8-2 sesistor
Would produce a texminal pd of 3.6V?
Taacher's Signalure

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