A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s'. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 1010 cm³³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm³s'. If the recombination lifetime is 100 µs, the intrinsic carrier concentration of silicon is 1010 cm³³and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
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Transcribed Image Text:A bar of silicon is doped with a boron concentration of 1016 cm³ and assumed to be fully
ionized. It is exposed to light such that electron-hole pairs are generated throughout the
volume of the bar at the rate of 1020 cm ³s'. If the recombination lifetime is 100 µs, the
intrinsic carrier concentration of silicon is 1010 cm³and assuming 100% ionization of boron,
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then the approximate product of steady-state electron and hole concentrations due to this
light exposure is
10^30 cm^-6
10^34 cm^-6
10^23 cm^-6
10^32cm^-6
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