A.) A 5000 A0 initial oxide is to be grown on the Silicon wafer. The process is to be carried off at 1100C in wet oxidation. How long would it take to grow the oxide layer?At 1100C, wet oxidation: A= 0.110 um and B= 0.510 um2/hr dry oxidation: A= 0.030 um and B= 0.027 um2/hrB.) If dry oxidation was used, how long would it take to grow the same thickness of oxide? 3. A) A 5000 Ao initial oxide is to be grown on the Silicon wafer. The processis to be carried off at 1100 °C in wet oxidation. How long would it take togrow the oxide layer?At 1100°C, wet oxidation: A = 0.110 um and B = 0.510 um2/ hrDry oxidation: A = 0.030 um and B = 0.027 µm2/ hrB) If dry oxidation was used, how long would it take to grow the samethickness of oxide?

The initial thickness of the oxide layer that is to be formed is 5000 A∘. The values of the…

Answered: A) A 5000 Aº initial oxide is to be…

Introduction to Chemical Engineering Thermodynamics

8th Edition

ISBN:9781259696527

Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart

Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart

Chapter1: Introduction

Section: Chapter Questions

Problem 1.1P

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A.) A 5000 A⁰ initial oxide is to be grown on the Silicon wafer. The process is to be carried off at 1100C in wet oxidation. How long would it take to grow the oxide layer?

At 1100C, wet oxidation: A= 0.110 um and B= 0.510 um²/hr

dry oxidation: A= 0.030 um and B= 0.027 um²/hr

B.) If dry oxidation was used, how long would it take to grow the same thickness of oxide?

3. A) A 5000 Ao initial oxide is to be grown on the Silicon wafer. The process
is to be carried off at 1100 °C in wet oxidation. How long would it take to
grow the oxide layer?
At 1100°C, wet oxidation: A = 0.110 um and B = 0.510 um2/ hr
Dry oxidation: A = 0.030 um and B = 0.027 µm2/ hr
B) If dry oxidation was used, how long would it take to grow the same
thickness of oxide?

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