A 0.5 μm SiO2 on a Si substrate is to be etched away. It is known there is a +- 5% variation of the oxide thickness and a +- 5% variation in the oxide etch rate. a. How much overetch (in % etch time) is required to ensure all oxide on Si is removed? b. What minimum selectivity of the oxide etch rate to the Si etch rate is required so that a maximum of 5nm (= 0.005 µm) of Si etched with the overetch calculated in part (a).

A 0.5 μm SiO2 on a Si substrate is to be etched away. It is known there is a +- 5% variation of the oxide thickness and a +- 5% variation in the oxide etch rate. a. How much overetch (in % etch time) is required to ensure all oxide on Si is removed? b. What minimum selectivity of the oxide etch rate to the Si etch rate is required so that a maximum of 5nm (= 0.005 µm) of Si etched with the overetch calculated in part (a).

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

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