A 0.5 μm SiO2 on a Si substrate is to be etched away. It is known there is a +- 5% variation of the oxide thickness and a +- 5% variation in the oxide etch rate. a. How much overetch (in % etch time) is required to ensure all oxide on Si is removed? b. What minimum selectivity of the oxide etch rate to the Si etch rate is required so that a maximum of 5nm (= 0.005 µm) of Si etched with the overetch calculated in part (a).
A 0.5 μm SiO2 on a Si substrate is to be etched away. It is known there is a +- 5% variation of the oxide thickness and a +- 5% variation in the oxide etch rate. a. How much overetch (in % etch time) is required to ensure all oxide on Si is removed? b. What minimum selectivity of the oxide etch rate to the Si etch rate is required so that a maximum of 5nm (= 0.005 µm) of Si etched with the overetch calculated in part (a).
Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
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Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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Transcribed Image Text:A 0.5 μm SiO2 on a Si substrate is to be etched away. It is known there is a +- 5% variation of
the oxide thickness and a +- 5% variation in the oxide etch rate.
a. How much overetch (in % etch time) is required to ensure all oxide on Si is removed?
b. What minimum selectivity of the oxide etch rate to the Si etch rate is required so that
a maximum of 5nm (= 0.005 µm) of Si etched with the overetch calculated in part (a).
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