*9.67 For the current mirror in Fig. P9.67, derive an expres- sion for the current transfer function I,(s)/I;(s) taking into account the BJT internal capacitances and neglecting r ro. Assume the BJTS to be identical. Observe that a signal ground appears at the collector of Q,. If the mirror is biased at 1 mA and the BJTS at this operating point are characterized by fr cies of the pole and zero of the transfer function. and 400 MHz, C, = 2 pF, and Bo = = o, find the frequen- Vcc

*9.67 For the current mirror in Fig. P9.67, derive an expres- sion for the current transfer function I,(s)/I;(s) taking into account the BJT internal capacitances and neglecting r ro. Assume the BJTS to be identical. Observe that a signal ground appears at the collector of Q,. If the mirror is biased at 1 mA and the BJTS at this operating point are characterized by fr cies of the pole and zero of the transfer function. and 400 MHz, C, = 2 pF, and Bo = = o, find the frequen- Vcc

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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1. Sketch the FET transfer curve defined by pinch of voltage of (- 5 V) and source current of (10 mA) and then, calculate the ra at VGs =0.3Vpif the ro=2kQ.
The problem are DC analysis problems. For each of the circuits verify the mode of operation and solve for all applicable DC voltages and currents. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o V (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume lp = K(Ves-Vr)? • (Assume K = 10 mA/V2). %3! 5V 1kn C2 2kn >10kn (C3 4mA -5V
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The parameters of the NMOS used are given as following: unCox = 156HA/V2 , VTN = 0.7 V. Take LN = 0.6 µm. Ignore the early effect. (Capacitors are used as open circuit in DC analysis. In small-signal analysis, on the other hand, capacitors are short- circuited because they have a very large value.) RD Rsig Ro R2 Draw the small signal circuit of the amplifier in the figure. Obtain the expressions rin, vo/vg, vo/vsig in terms of circuit parameters by using the small signal circuit.
(i) (ii) Explain what happens to a BJT transistor in active mode and what its main application at this mode is. Then, state the other two modes at which a BJT transistor can operate. A BJT transistor is biased in the forward-active region. The current gain is 95 and the collector current is 475 µA. Calculate the base current, collector current and common-base current gain.
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If the BJT has a β value of 100, VT = 25 mV, and VBE(ON) = 0.7 V, find DC collector current (IC), Base Current (IB), Emitter Current (IE), and the collector voltage (VC).
Design a feasible class A silicon BJT Power Amplifier that provides a high voltagegain using 15 volts supply and employs a concept to increase its loaded efficiency to50% so that little power loss is provided at the collector terminal.Given by manufacturer for safe operation, the amplifying component has a DCcurrent gain of 200 and a collector current limit of 4mA. The output stage of theAmplifier drives a headphone with 32-ohms load impedance applicable forsmartphones.
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