Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF, and two resistances Rc and Rp. The supply voltage is denoted as VC. The voltages Vin and Vout designate the input and output voltages, respectively, whereas the currents IB, Ic and Ig denote the base, collector, and emitter currents, respectively. VcC RC + V out V in RE GND Throughout this question, we will also be using the following notations: VBE designates the voltage between base and emitter. VRE on denotes the threshold voltage of the base-emitter junction. For a silicon BJT, we have VBE.on 0.7 volt. VCE designate the voltage between collector and emitter. a) Select, in the list below, the THREE general expressions that apply to this circuit. Note that a negative mark (-1) is given for a wrong selection. O Vout Vcc- Rc Ic O Vout = Vcc + Rc Ic O Vin = VBE- RE IE %3D O Vout RE IE VBE + RE IE %3D O Vin = RE IE O Vonut = Vin VBE - VCE O Vout = Vin VBE + VCE Unanswered b) Assume that the BJT is in the cut-off mode. What is the expression of the output voltage Vout ? Vcc - VBE,on o Vout VCE, sat VBE,on O Vou Vcc o Vout = VBE,on – VCE,sat out o Vout o Vout = VBE,on o Vout O Vout = VCE,sat o Vout = Vcc - VCE,sat
Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF, and two resistances Rc and Rp. The supply voltage is denoted as VC. The voltages Vin and Vout designate the input and output voltages, respectively, whereas the currents IB, Ic and Ig denote the base, collector, and emitter currents, respectively. VcC RC + V out V in RE GND Throughout this question, we will also be using the following notations: VBE designates the voltage between base and emitter. VRE on denotes the threshold voltage of the base-emitter junction. For a silicon BJT, we have VBE.on 0.7 volt. VCE designate the voltage between collector and emitter. a) Select, in the list below, the THREE general expressions that apply to this circuit. Note that a negative mark (-1) is given for a wrong selection. O Vout Vcc- Rc Ic O Vout = Vcc + Rc Ic O Vin = VBE- RE IE %3D O Vout RE IE VBE + RE IE %3D O Vin = RE IE O Vonut = Vin VBE - VCE O Vout = Vin VBE + VCE Unanswered b) Assume that the BJT is in the cut-off mode. What is the expression of the output voltage Vout ? Vcc - VBE,on o Vout VCE, sat VBE,on O Vou Vcc o Vout = VBE,on – VCE,sat out o Vout o Vout = VBE,on o Vout O Vout = VCE,sat o Vout = Vcc - VCE,sat
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Transcribed Image Text:Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor
(BJT) with a forward current gain BF, and two resistances Rc and Rp. The supply voltage is denoted as VC.
The voltages Vin and Vout designate the input and output voltages, respectively, whereas the currents IB, Ic and Ig denote
the base, collector, and emitter currents, respectively.
VcC
RC
+
V out
V in
RE
GND
Throughout this question, we will also be using the following notations:
VBE designates the voltage between base and emitter.
VRE on denotes the threshold voltage of the base-emitter junction. For a silicon BJT, we have VBE.on 0.7 volt.
VCE designate the voltage between collector and emitter.
a)
Select, in the list below, the THREE general expressions that apply to this circuit.
Note that a negative mark (-1) is given for a wrong selection.
O Vout
Vcc- Rc Ic
O Vout = Vcc + Rc Ic
O Vin = VBE- RE IE
%3D
O Vout
RE IE
VBE + RE IE
%3D
O Vin = RE IE
O Vonut = Vin VBE - VCE
O Vout
= Vin
VBE + VCE
Unanswered
b)
Assume that the BJT is in the cut-off mode.
What is the expression of the output voltage Vout ?
Vcc - VBE,on
o Vout
VCE, sat
VBE,on
O Vou
Vcc
o Vout = VBE,on – VCE,sat
out
o Vout
o Vout = VBE,on
o Vout
O Vout = VCE,sat
o Vout = Vcc - VCE,sat
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