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6. Drive-in diffusion in ICs, is used to: A. Diffuse the impurity atoms into the silicon from a gas phase. B. Diffuse the impurity atoms into the silicon from a liquid phase. C. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution without increasing the overall impurity content. D. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution with increasing the overall impurity content the colute atoms occupy urtal structure of solvent. D. Vacancy sites

6. Drive-in diffusion in ICs, is used to: A. Diffuse the impurity atoms into the silicon from a gas phase. B. Diffuse the impurity atoms into the silicon from a liquid phase. C. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution without increasing the overall impurity content. D. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution with increasing the overall impurity content the colute atoms occupy urtal structure of solvent. D. Vacancy sites

Elements Of Electromagnetics
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
Problem 1.1MA
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Q.₁. Choose the most correct answer for the following questions 1. With increasing melting point, the activation energy for diffusion generally becomes A. lower. B. higher. 2. Burgers vector (b) is used to: A. Determine the type of distortion. B. Describe the size and the direction of the lattice distortion caused by a dislocation. C. Describe the size and the direction of the lattice distortion caused by a vacancy. D. Determine the distortion density. 3. Diffusion faster for: A. Close-packed structures. 4. Substitutional diffusion A. Requires existence of vacancies. C. Needs to overcome an energy barrier. 5. Schottky-defect in ceramic material is A. Interstitial impurity. C. Substitutional impurity. 6. Drive-in diffusion in ICs, is used to: C. same. D. Depends on the degree of melting temperature rise. B. Lower melting T materials. C. Larger diffusing atoms. 1 B. Vacancy-interstitial pair of cations. D. Pair of nearby cation and anion vacancies. B. Becomes faster with increasing temperature. D. All of the above. A. Diffuse the impurity atoms into the silicon from a gas phase. B. Diffuse the impurity atoms into the silicon from a liquid phase. C. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution without increasing the overall impurity content. D. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution with increasing the overall impurity content 7. In interstitial solid solution, the solute atoms occupy B. Normal solvent atom sites. A. Interstitial sites. 2 3 D. All mentioned. C. Changes the crystal structure of solvent. D. Vacancy sites 4 5 6 7
Transcribed Image Text:Q.₁. Choose the most correct answer for the following questions 1. With increasing melting point, the activation energy for diffusion generally becomes A. lower. B. higher. 2. Burgers vector (b) is used to: A. Determine the type of distortion. B. Describe the size and the direction of the lattice distortion caused by a dislocation. C. Describe the size and the direction of the lattice distortion caused by a vacancy. D. Determine the distortion density. 3. Diffusion faster for: A. Close-packed structures. 4. Substitutional diffusion A. Requires existence of vacancies. C. Needs to overcome an energy barrier. 5. Schottky-defect in ceramic material is A. Interstitial impurity. C. Substitutional impurity. 6. Drive-in diffusion in ICs, is used to: C. same. D. Depends on the degree of melting temperature rise. B. Lower melting T materials. C. Larger diffusing atoms. 1 B. Vacancy-interstitial pair of cations. D. Pair of nearby cation and anion vacancies. B. Becomes faster with increasing temperature. D. All of the above. A. Diffuse the impurity atoms into the silicon from a gas phase. B. Diffuse the impurity atoms into the silicon from a liquid phase. C. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution without increasing the overall impurity content. D. Transport impurity atoms farther into the silicon to provide a more suitable concentration distribution with increasing the overall impurity content 7. In interstitial solid solution, the solute atoms occupy B. Normal solvent atom sites. A. Interstitial sites. 2 3 D. All mentioned. C. Changes the crystal structure of solvent. D. Vacancy sites 4 5 6 7
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