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= 5*1016 / cm3, n; = 1*1010/ An abrupt Si p-n junction is formed with n, = 1*1015/ cm³, pp cm3, ɛo = 8.854*10-14 F/cm &, = 11.8 kT/q = 26 mV and q = 1.6*10-19 C then the built-in potential across the junction is: 550 mV O b. 680 mV C. 700 mV O d. 600 mV

= 5*1016 / cm3, n; = 1*1010/ An abrupt Si p-n junction is formed with n, = 1*1015/ cm³, pp cm3, ɛo = 8.854*10-14 F/cm &, = 11.8 kT/q = 26 mV and q = 1.6*10-19 C then the built-in potential across the junction is: 550 mV O b. 680 mV C. 700 mV O d. 600 mV

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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An abrupt Si p-n junction is formed with n, = 1*1015 / cm3, p, = 5*1016 / cm³, n; = 1*1010 / cm³, ɛo = 8.854*10-14 F/cm &, = 11.8 kT/q = 26 mV and q = 1.6*10-19 C then the built-in potential across the junction is: a. 550 mV Ob. 680 mV Oc. 700 mV Od. 600 mV
Transcribed Image Text:An abrupt Si p-n junction is formed with n, = 1*1015 / cm3, p, = 5*1016 / cm³, n; = 1*1010 / cm³, ɛo = 8.854*10-14 F/cm &, = 11.8 kT/q = 26 mV and q = 1.6*10-19 C then the built-in potential across the junction is: a. 550 mV Ob. 680 mV Oc. 700 mV Od. 600 mV
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