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5.) (Based on Neaman 4.21) - Assuming Silicon at a temperature is 300 K and: (a) The equilibrium electron concentration is 1.5 × 10¹6 cm-³, determine Ec - EF. (b) The equilibrium hole concentration is 5.0 × 10¹5 cm-3, determine EF - Ev. (c) Repeat part (a) for gallium arsenide 1 (d) Repeat part (b) for gallium arsenide

5.) (Based on Neaman 4.21) - Assuming Silicon at a temperature is 300 K and: (a) The equilibrium electron concentration is 1.5 × 10¹6 cm-³, determine Ec - EF. (b) The equilibrium hole concentration is 5.0 × 10¹5 cm-3, determine EF - Ev. (c) Repeat part (a) for gallium arsenide 1 (d) Repeat part (b) for gallium arsenide

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Pls help ASAP. Pls show all work and explain thoroughly on what equation is being used and how you come up with the answer. Also, pls underline or square the final answers. 

5.) (Based on Neaman 4.21) - Assuming Silicon at a temperature is 300 K and: (a) The equilibrium electron concentration is 1.5 × 10¹6 cm-³, determine Ec - EF. (b) The equilibrium hole concentration is 5.0 × 10¹5 cm-³, determine Eƒ – Ev. (c) Repeat part (a) for gallium arsenide 1 (d) Repeat part (b) for gallium arsenide
Transcribed Image Text:5.) (Based on Neaman 4.21) - Assuming Silicon at a temperature is 300 K and: (a) The equilibrium electron concentration is 1.5 × 10¹6 cm-³, determine Ec - EF. (b) The equilibrium hole concentration is 5.0 × 10¹5 cm-³, determine Eƒ – Ev. (c) Repeat part (a) for gallium arsenide 1 (d) Repeat part (b) for gallium arsenide
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