•44 A silicon-based MOSFET has a square gate 0.50 µm on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20 µm thick and has a dielectric constant of 4.5. (a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 1.0 V?
•44 A silicon-based MOSFET has a square gate 0.50 µm on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20 µm thick and has a dielectric constant of 4.5. (a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 1.0 V?
College Physics
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Chapter1: Units, Trigonometry. And Vectors
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![•44 A silicon-based MOSFET has a square gate 0.50 µm on
edge. The insulating silicon oxide layer that separates the gate
from the p-type substrate is 0.20 µm thick and has a dielectric
constant of 4.5. (a) What is the equivalent gate-substrate
capacitance (treating the gate as one plate and the substrate as
the other plate)? (b) Approximately how many elementary
charges e appear in the gate when there is a gate-source
potential difference of 1.0 V?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fff2d2d24-917c-4405-a98a-00011494981b%2Fa54e67c3-4fad-4d5a-ac9c-449b3333f9ab%2Fwnkkgo4_processed.jpeg&w=3840&q=75)
Transcribed Image Text:•44 A silicon-based MOSFET has a square gate 0.50 µm on
edge. The insulating silicon oxide layer that separates the gate
from the p-type substrate is 0.20 µm thick and has a dielectric
constant of 4.5. (a) What is the equivalent gate-substrate
capacitance (treating the gate as one plate and the substrate as
the other plate)? (b) Approximately how many elementary
charges e appear in the gate when there is a gate-source
potential difference of 1.0 V?
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