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4.Given Io = 8 * 10-15 and VT = kT/q = 0.026V, what will be the current through the diode when a voltage of 2V is applied in forward bias? a. 2k A

4.Given Io = 8 * 10-15 and VT = kT/q = 0.026V, what will be the current through the diode when a voltage of 2V is applied in forward bias? a. 2k A

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PN Junction 4.Given Io : 8 * 10-15 and VT = kT/q = 0.026V, what will be the current through the diode when a voltage of 2V is applied in forward bias? а. 2k A b. 2 * 1019 A С. 2М A d. 5.91 * 10-14 A 1.Which are not one of the steps to the formation of a PN junction а. The carriers recombine, disappearing in the middle. b. P-type dopants are diffused onto an N-type wafer С. Some holes and electrons are left near the depletion region, causing a negative charge in the p-type region and a positive charge in the n-type region. d. Carriers near the depletion region diffuse onto the other side of the junction BJT Fundamentals 7.Which of the following does NOT happen in an NPN BJT in forward-active mode а. Positive current flows from the emitter to the collector b. Holes and electrons recombine in the base c. Minority carriers drift from the collector to the base and vice versa d. Electrons from the emitter diffuse towards the base 9.Which of the following BJT performance parameters gets larger than 1? а. b. Y С. В d. aT
Transcribed Image Text:PN Junction 4.Given Io : 8 * 10-15 and VT = kT/q = 0.026V, what will be the current through the diode when a voltage of 2V is applied in forward bias? а. 2k A b. 2 * 1019 A С. 2М A d. 5.91 * 10-14 A 1.Which are not one of the steps to the formation of a PN junction а. The carriers recombine, disappearing in the middle. b. P-type dopants are diffused onto an N-type wafer С. Some holes and electrons are left near the depletion region, causing a negative charge in the p-type region and a positive charge in the n-type region. d. Carriers near the depletion region diffuse onto the other side of the junction BJT Fundamentals 7.Which of the following does NOT happen in an NPN BJT in forward-active mode а. Positive current flows from the emitter to the collector b. Holes and electrons recombine in the base c. Minority carriers drift from the collector to the base and vice versa d. Electrons from the emitter diffuse towards the base 9.Which of the following BJT performance parameters gets larger than 1? а. b. Y С. В d. aT
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