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4. Use this information to answer Question 4-5: Consider a reverse biased pn junction made of silicon as shown below. The doping densities in the p- and n-sides are NA = Np = 1x 1016 cm-3. Carrier lifetimes are T, = T, = 10-, Light The reverse bias is large enough to make the minority carrier concentration become zero at the junction. The depletion region width is small enough to be ignored, zn Zp = 0. The quasi-neutral p-type region is short, W

4. Use this information to answer Question 4-5: Consider a reverse biased pn junction made of silicon as shown below. The doping densities in the p- and n-sides are NA = Np = 1x 1016 cm-3. Carrier lifetimes are T, = T, = 10-, Light The reverse bias is large enough to make the minority carrier concentration become zero at the junction. The depletion region width is small enough to be ignored, zn Zp = 0. The quasi-neutral p-type region is short, W

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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4. Use this information to answer Question 4-5: Consider a reverse biased pn junction made of silicon as shown below. The doping densities in the p- and n-sides are NA = Np = 1 x 1016 cm-3. Carier lifetimes are T = T, = 10-6 s Light The reverse bias is large enough to make the minority carrier concentration become zero at the junction. The depletion region width is small enough to be ignored, Zn = Zp = 0. The quasi-neutral p-type region is short, W = 1 um « Ln while the quasi-neutral n-type region is long, L = 100 um > Lp. where Ln and Lp are the diffusion lengths of electron in the p-side and hole in the n-side, respectively. First, assume there is no light illumination and calculate the current density in unit of A/cm?. Answers within 5% error will be considered correct. Hint: Note that this is a combination of short- and long-diode. On the p-side you have a short diode with no recombination while on the n-side you have a long diode with recombination. You will need to use the appropriate equations for the p- and n-regions. 3.9385e-10 V Correct 5. Now the surface of the silicon on the p-side is illuminated with light as shown above. Assume all incident light is W, and creates an excess minority concentration of An(z = -W) = instantly absorbed at the surface, = 1x 1010 cm3. Calculate the current density in unit of A/cm?. Answers within 59% error will be considered correct. 5.76e-4 Correct
Transcribed Image Text:4. Use this information to answer Question 4-5: Consider a reverse biased pn junction made of silicon as shown below. The doping densities in the p- and n-sides are NA = Np = 1 x 1016 cm-3. Carier lifetimes are T = T, = 10-6 s Light The reverse bias is large enough to make the minority carrier concentration become zero at the junction. The depletion region width is small enough to be ignored, Zn = Zp = 0. The quasi-neutral p-type region is short, W = 1 um « Ln while the quasi-neutral n-type region is long, L = 100 um > Lp. where Ln and Lp are the diffusion lengths of electron in the p-side and hole in the n-side, respectively. First, assume there is no light illumination and calculate the current density in unit of A/cm?. Answers within 5% error will be considered correct. Hint: Note that this is a combination of short- and long-diode. On the p-side you have a short diode with no recombination while on the n-side you have a long diode with recombination. You will need to use the appropriate equations for the p- and n-regions. 3.9385e-10 V Correct 5. Now the surface of the silicon on the p-side is illuminated with light as shown above. Assume all incident light is W, and creates an excess minority concentration of An(z = -W) = instantly absorbed at the surface, = 1x 1010 cm3. Calculate the current density in unit of A/cm?. Answers within 59% error will be considered correct. 5.76e-4 Correct
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