4) Determine the following parameters according to the self-bias configuration JFET circuit which is given below. 4.a) Calculate Ip, Is, Vps, Vp and Vs . 4.b) Draw the load line using parameters which are found above and show Q point on it? VDD=. Rp=. Ipss=. Vp=. RG = 3MN Rs=. Figure 3. Self-bias configuration JFET

6. Rs = 200 k2, Rc =1 kQ, and V=15V. The transistor has B= 100. a) Analyze and determine the operation region of the NPN transistor.. b) Solve for Iç and Væ. Rc VCe

Follow the instructions below using the parameters below. 0.6um technology. Any size transistor (W or L) must be divisible by 0.3um to be produced by any company. Always set the sizes of W and L assuming the smallest L possible for each transistor according to the technology. Include units VDD = 3V: VT0P = 0.7V; VTON = 0.5V; unCox = 99uA / V ^ 2 upCox = 33uA / V ^ 2; gamma = 0.1 sqrt (V); 2ΦF = 0.6V Design a bit of a static RAM memory when the capacitance of Q, CQ = 5fF and the capacitance of the line bit is 1pF. a.  Draw your schematic identify each node and list the transistors. b. Draw the sense amplifier circuit and the precharge-equalizer, if the user wants to precharge the line to VDD. c. The access transistors in a RAM memory bit have a size (W / L) a = 6um / 0.6um Determines the minimum size of the NMOS transistors in the inverters. Justify the size you are choosing for each transistor

The NMOS and PMOS transistors have the following characteristics. The channel length is 350 nanometers. For NMOS: tox=50nm, Vtn-0.25V, un-560cm²/vsec, W=700nm, L=350nm For PMOS: tox-50nm, Vtp=-0.35V, up-240cm²/vsec, W=700nm, L=350nm a) Compute the NMOS gate capacitance CG in Femto Farads. b) Compute the resistance Rp for PMOS if the power supply voltage (Vdd) is 3.3 volts and the threshold voltage is 0.35 volts. Use the multiplying adjustment factor as 2.5.

VDD = 5 V, and Rin = 500 k2. The transistor parameters are given as VTN1 = 0.7 V, VTP2 = -0.7 V, Kni = 0.4 mA/V?, Kp2 = 2 mA/V?, and A1 =12 = 0. (a) Design the circuit such that the current and voltage values at Q point are: Ipq1 = 0.3 mA, IDQ2 = 0.8 mA, VosQ1 = 3 V, and VpsQ2 = 4 V. The voltage across Rs1 is to be 0.5 V. (b) Draw the small-signal equivalent circuit of the amplifier. (c) Determine the small-signal voltage gain A, = Vo/Vi. %3D VDD Rs2 RD1 R1 Rin =Cs2 M1 M2 oVo Cc R2 Rs1 Cs1 Rp2 Vi (+