34 Shown in Figure P10.34 is a common-emitteramplifier stage implemented with an npn silicontransistor. The DC bias circuit connected to the baseconsists of a single resistor; however, it is connecteddirectly between base and collector. Determine VCEQand the region of operation.Vcc = 12 VB = 130Rg = 325 k2Rc = 1.9 k2Rg = 2.3 k2R = 10 k2Rs = 0.5 k2vs = 1 cos(6.28 × 10°t) mVRcVcRERER1

From the above circuit DC bias circuit is given below;

Answered: 34 Shown in Figure P10.34 is a…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question three: Given the BJT transistor characteristics of Figure below: a. Draw load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rp to establish the resulting operating point. c. What are the resulting values of Ico and Vceq? d. What is the value of ß at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Icsar) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the dc power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1 Ic(mA) 110HA 100 µA 10 9 40 µÃ 5 30 HA 4 20 μΑ 10 HA 10 15 20 25 30 VCE (V)
Describe the working principles of Bipolar Junction Transistor (BJT): Study of Single Stage Transistor Common Emitter Amplifier
In reference to the given figure, VCB = 10.3V and VBE = 0.7V. NOTES: VCB = VC-VB VBE = VB-VE In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RC, in kilo-ohms? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the voltage of RB, in volts? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RB in kilo-ohms, if Beta=100?
Design a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.
Sketch an n-stage PUF. Explain how a biased arbiter impact the performance of a Strong PUF.
4. A Darlington transistor is essentially an array of two transistors connected as shown below. Assume both transistors follow our simple model with a current gain of B=100. Determine the maximum value of R2 that will just saturate the transistors, and pass full current through the load resistance R1. v2 V2 R2 PULSE (0 5 0) Q2 NPN R1 10 Q1 NPN V1 24
To operate as an amplifier, it is the base of an npn transistor... Please select one: a. 0V b. positive by collector c. negative relative to emitter d. positive relative to emitter
1.
2) Consider an enhancement MOSFET common source amplifier circuit in Figure 2(a). The output characteristic is showed in Figure 2(b). Assume that the circuit is operating in the saturation region and k = 5 mA/V2. It also given that ra = ro = 00, Cgd = 2 pF, Cgs = 4 pF, Cas = 1 pF, Cwi = 4 pF and Cwo = 3pF. a. Using DC load line, prove that Ino = 22.5 mA and VpsQ = 5.5 V for Vaso = 2.5V. (Please attach the characteristic graph provided in your working solution) b. Draw the AC equivalent circuit at mid frequency. c. Estimate the voltage gain Av = Vo /Vi. d. Determine the dominant high cut – off frequency for the circuit. 10 V Rp 100 2 6 MQ C2 ci Rs RL Vo 1002 R: 5002 Rs Vo 14 MQ Cs 100 2 Vs Figure 2(a) 60- 50 30 20 10 9. 10 Figure 2(b) (yu) 4
Find i and Vo in the circuit of Fig. 10 2 AR 24 2 50Ω : 25 2 15 V 202 30 Ω 60 Ω 30N +
Q3 Figure 3 shows two current mirrors based on MOSFET. Derive a formula relating the input current Iin to the output current Iout for the current mirror on the left of Figure 3 stating any assumption. (a) (b) Derive the input resistance Rin and output resistance Rout for the circuit on the left of Figure 3. State any assumption. (c) Derive a formula relating lin and Iout for the circuit on the right of Figure 3 assuming that M1 and M2 are identical, and that the length and width of the channel for the transistor M4 are double respect to those of M3. State anv assumption. VDD M3 M4 out Iout M1 M2 M1 M2 Vss = 0 V Vss = 0 V Figure 3
In the circuit given in the figure, Vcc = 15 V, R1 = R2 = 10kΩ, RE = 1KΩ, RL = 0.5kΩ and transistor parameters are given as VBE = 0.7V, ßdc = ß0 = 100. a. Calculate the values of DC bias currents and voltages (IBQ, ICQ and VCEQ). b. Draw the small signal equivalent circuit of the circuit using the hybrid model of the transistor. c. Derive the input impedance expression of the circuit and calculate its value. d. Derive the AVI and AVG voltage gain expressions and calculate their values. e. Derive the current gain expression AI = I0 / Ii and calculate its value. Compare this value you have calculated with the value you will calculate using the expression Aİ = Zi AVI / RL.

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