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32. Recombination is when a. A crystal is formed b. A positive and a negative ion bond together c. An electron falls into a hole d. A valence electron becomes a conduction electron 33. In a semiconductor crystal, the atoms are held together by a. Forces of attraction b. The interaction valence electrons c. Covalent bonds d. Answer a, b, c 34. Each atom in a silicon crystal has a. No valence electrons because all are shared with others atoms b. Eight valence electrons because all are with other atoms c. Four valence electrons d. Four conduction electrons 35. The current in a semiconductor is produced by a. Holes only b. Electrons only c. Both electrons and holes d. Negative ions 36. The difference between an insulator and a semiconductor is a. A wider energy gap between the valence band and the conduction band b. The number of free electrons c. The atomic structure d. Answers a, b, and c 37. The process of adding an impurity to an intrinsic semiconductor is called a. Atomic modification b. Doping c. Recombination d. Ionization 38. The purpose of a pentavalent impurity is to a. Increase the number of the free electrons b. Create minority carriers c. Reduce the conductivity of silicon d. Increase the number of holes 39. The majority carriers in an n-type semiconductor are a. Holes b. Conduction electrons c. Valence electron d. Protons 40. A pn junction is formed by a. Ionization b. The boundary of a p-type and an n-type material c. The recombination of electrons and holes d. The collision of a proton and a neutron

32. Recombination is when a. A crystal is formed b. A positive and a negative ion bond together c. An electron falls into a hole d. A valence electron becomes a conduction electron 33. In a semiconductor crystal, the atoms are held together by a. Forces of attraction b. The interaction valence electrons c. Covalent bonds d. Answer a, b, c 34. Each atom in a silicon crystal has a. No valence electrons because all are shared with others atoms b. Eight valence electrons because all are with other atoms c. Four valence electrons d. Four conduction electrons 35. The current in a semiconductor is produced by a. Holes only b. Electrons only c. Both electrons and holes d. Negative ions 36. The difference between an insulator and a semiconductor is a. A wider energy gap between the valence band and the conduction band b. The number of free electrons c. The atomic structure d. Answers a, b, and c 37. The process of adding an impurity to an intrinsic semiconductor is called a. Atomic modification b. Doping c. Recombination d. Ionization 38. The purpose of a pentavalent impurity is to a. Increase the number of the free electrons b. Create minority carriers c. Reduce the conductivity of silicon d. Increase the number of holes 39. The majority carriers in an n-type semiconductor are a. Holes b. Conduction electrons c. Valence electron d. Protons 40. A pn junction is formed by a. Ionization b. The boundary of a p-type and an n-type material c. The recombination of electrons and holes d. The collision of a proton and a neutron

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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32. Recombination is when a. A crystal is formed b. A positive and a negative ion bond together c. An electron falls into a hole d. A valence electron becomes a conduction electron 33. In a semiconductor crystal, the atoms are held together by a. Forces of attraction b. The interaction valence electrons c. Covalent bonds d. Answer a, b, c 34. Each atom in a silicon crystal has a. No valence electrons because all are shared with others atoms b. Eight valence electrons because all are with other atoms c. Four valence electrons d. Four conduction electrons 35. The current in a semiconductor is produced by a. Holes only b. Electrons only c. Both electrons and holes d. Negative ions 36. The difference between an insulator and a semiconductor is a. A wider energy gap between the valence band and the conduction band b. The number of free electrons c. The atomic structure d. Answers a, b, and c 37. The process of adding an impurity to an intrinsic semiconductor is called a. Atomic modification b. Doping c. Recombination d. Ionization 38. The purpose of a pentavalent impurity is to a. Increase the number of the free electrons b. Create minority carriers c. Reduce the conductivity of silicon d. Increase the number of holes 39. The majority carriers in an n-type semiconductor are а. Holes b. Conduction electrons c. Valence electron d. Protons 40. A pn junction is formed by a. Ionization b. The boundary of a p-type and an n-type material c. The recombination of electrons and holes d. The collision of a proton and a neutron
Transcribed Image Text:32. Recombination is when a. A crystal is formed b. A positive and a negative ion bond together c. An electron falls into a hole d. A valence electron becomes a conduction electron 33. In a semiconductor crystal, the atoms are held together by a. Forces of attraction b. The interaction valence electrons c. Covalent bonds d. Answer a, b, c 34. Each atom in a silicon crystal has a. No valence electrons because all are shared with others atoms b. Eight valence electrons because all are with other atoms c. Four valence electrons d. Four conduction electrons 35. The current in a semiconductor is produced by a. Holes only b. Electrons only c. Both electrons and holes d. Negative ions 36. The difference between an insulator and a semiconductor is a. A wider energy gap between the valence band and the conduction band b. The number of free electrons c. The atomic structure d. Answers a, b, and c 37. The process of adding an impurity to an intrinsic semiconductor is called a. Atomic modification b. Doping c. Recombination d. Ionization 38. The purpose of a pentavalent impurity is to a. Increase the number of the free electrons b. Create minority carriers c. Reduce the conductivity of silicon d. Increase the number of holes 39. The majority carriers in an n-type semiconductor are а. Holes b. Conduction electrons c. Valence electron d. Protons 40. A pn junction is formed by a. Ionization b. The boundary of a p-type and an n-type material c. The recombination of electrons and holes d. The collision of a proton and a neutron
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