-3Q3] Find the resistivity at 300 K for a Si sample doped with 1.0×10 cm of phosphorous atoms, 8.5x 10cm of arsenic atoms and 1.12x10 cm of boron atoms. Assume that the impurities are completelyionized and the mobilities are u, = 1500 cm' /V.s, u,concentrations. n, 9.65x10° cm in Si at 300 K.-3500 cm /V.s, independent of impurity-3

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Answered: 3] Find the resistivity -3 cm of…

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3] Find the resistivity -3 cm of arsenic ator at ic onize and the m

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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Question

-3
Q3] Find the resistivity at 300 K for a Si sample doped with 1.0×10 cm of phosphorous atoms, 8.5x 10
cm of arsenic atoms and 1.12x10 cm of boron atoms. Assume that the impurities are completely
ionized and the mobilities are u, = 1500 cm' /V.s, u,
concentrations. n, 9.65x10° cm in Si at 300 K.
-3
500 cm /V.s, independent of impurity
-3

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