Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
3-2) similar to Sze & Lee prob. 3-7 A one-sided p*- n Si junction at 300 K is doped with N4= 101º cm . Choose values of Np and junction area such that the junction capacitance C; = 0.6 pF at VR = 5.0 V. (Be sure to properly account for the built-in voltage.) 3-3) similar Sze & Lee prob. 3-12 An ideal silicon p-n junction has Np 2x10" cm, N4= 105 cm , and t = tp = 10 s, and a device area of 2x10* cm (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse currents at 0.7 V. 3-4) Sze & Lee prob. 3-16 For a silicon p*- n one-sided abrupt junction with Np= 1015 em*, find the depletion layer width at breakdown. If the n-region is reduce to a 5 µum thickness, calculate the breakdown voltage and compare your result with Fig. 27. Access more

3-2) similar to Sze & Lee prob. 3-7 A one-sided p*- n Si junction at 300 K is doped with N4= 101º cm . Choose values of Np and junction area such that the junction capacitance C; = 0.6 pF at VR = 5.0 V. (Be sure to properly account for the built-in voltage.) 3-3) similar Sze & Lee prob. 3-12 An ideal silicon p-n junction has Np 2x10" cm, N4= 105 cm , and t = tp = 10 s, and a device area of 2x10* cm (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse currents at 0.7 V. 3-4) Sze & Lee prob. 3-16 For a silicon p*- n one-sided abrupt junction with Np= 1015 em*, find the depletion layer width at breakdown. If the n-region is reduce to a 5 µum thickness, calculate the breakdown voltage and compare your result with Fig. 27. Access more

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
See similar textbooks
icon
Related questions
Question
3-2) similar to Sze & Lee prob. 3-7 A one-sided p*- n Si junction at 300 K is doped with N4= 1019 cm. Choose values of Np and junction area such that the junction capacitance C;=0.6 pF at VR=5.0 V. (Be sure to properly account for the built-in voltage.) 2 Create PDF Combine Files 2 Edit PDF 3-3) similar Sze & Lee prob. 3-12 Export PDF p-n junction has Np= 2x107 cm, NA= 1015 cm³ , and tn = tp = 106 s, and a device area of 2x10 cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse An ideal silicon EU Organize Pages currents at ± 0.7 V. Prepare Form Comment 3-4) Sze & Lee prob. 3-16 For a silicon p*- n one-sided abrupt junction with ND= 1015 cm³, find the depletion layer width at breakdown. If the n-region is reduce to a 5 um thickness, calculate the breakdown voltage and compare your result with Fig. 27. Scan & OCR Protect A More Tools Access more tools and enhanced functionalities ENG 1:50 PM pe here to search 22% 70°F Partly sunny O G 4x US 9/24/2021
Transcribed Image Text:3-2) similar to Sze & Lee prob. 3-7 A one-sided p*- n Si junction at 300 K is doped with N4= 1019 cm. Choose values of Np and junction area such that the junction capacitance C;=0.6 pF at VR=5.0 V. (Be sure to properly account for the built-in voltage.) 2 Create PDF Combine Files 2 Edit PDF 3-3) similar Sze & Lee prob. 3-12 Export PDF p-n junction has Np= 2x107 cm, NA= 1015 cm³ , and tn = tp = 106 s, and a device area of 2x10 cm? (a) Calculate the theoretical saturation current at 300K. (b) Calculate the forward and reverse An ideal silicon EU Organize Pages currents at ± 0.7 V. Prepare Form Comment 3-4) Sze & Lee prob. 3-16 For a silicon p*- n one-sided abrupt junction with ND= 1015 cm³, find the depletion layer width at breakdown. If the n-region is reduce to a 5 um thickness, calculate the breakdown voltage and compare your result with Fig. 27. Scan & OCR Protect A More Tools Access more tools and enhanced functionalities ENG 1:50 PM pe here to search 22% 70°F Partly sunny O G 4x US 9/24/2021
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 3 steps with 2 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Similar questions
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,
SEE MORE TEXTBOOKS