3-10. Given that Kn = 250 μA, Vin = 0.5 V, and W/L = 3, find R₁ so that the transistor is on the saturated/nonsaturated bias boundary. 2 V 5 V T R₁
3-10. Given that Kn = 250 μA, Vin = 0.5 V, and W/L = 3, find R₁ so that the transistor is on the saturated/nonsaturated bias boundary. 2 V 5 V T R₁
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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**Problem 3-10:**
Given that \( K_n = 250 \, \mu A \), \( V_{tn} = 0.5 \, V \), and \(\frac{W}{L} = 3 \), find \( R_1 \) so that the transistor is on the saturated/nonsaturated bias boundary.
**Circuit Diagram Explanation:**
The diagram consists of a simple MOSFET circuit. The circuit shows a transistor with three terminals.
- The gate of the transistor is connected to a \( 2 \, V \) source.
- The drain is connected through a resistor labeled \( R_1 \) to a \( 5 \, V \) source.
- The source is connected to ground.
The task involves calculating the resistance \( R_1 \) necessary to ensure that the MOSFET operates on the boundary between the saturation region and the nonsaturation (or triode) region. This involves using the given parameters \( K_n \), \( V_{tn} \), and the aspect ratio \(\frac{W}{L}\).
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