+2.5 VO +2.5 Vo 1.81 M, 181 4.44 +2.5 V Mя M 0.10 V 4.65 4.44 +2.5 V Мл 0.10 V м, 4.32 (a) (b) Figure 6.27 NMOS NAND gate: Y = AB: (a) approximate design, (b) corrected design.
+2.5 VO +2.5 Vo 1.81 M, 181 4.44 +2.5 V Mя M 0.10 V 4.65 4.44 +2.5 V Мл 0.10 V м, 4.32 (a) (b) Figure 6.27 NMOS NAND gate: Y = AB: (a) approximate design, (b) corrected design.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Question
Draw the schematic of a three-input NAND gate. What are the W/L ratios for the
transistors based?
Transcribed Image Text:+2.5 VO
+2.5 Vo
1.81
M, 181
4.44
+2.5 V
Mя
M 0.10 V
4.65
4.44
+2.5 V
Мл
0.10 V
м,
4.32
(a)
(b)
Figure 6.27 NMOS NAND gate: Y = AB: (a) approximate design, (b) corrected design.
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