2.16 Concentration questions with a twist. (a) A silicon wafer is uniformly doped p-type with N₁ = 10¹5/cm³. At 70 K, what are the equilibrium hole and electron concentrations? (b) A semiconductor is doped with an impurity concentration N such that N>n; and all the impurities are ionized. Also, n = N and p = n²/N. Is the impurity a donor or an acceptor? Explain. (c) The electron concentration in a piece of Si maintained at 300 K under equilibrium conditions is 105/cm³. What is the hole concentration?

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question
1.Pierret Problem 2.16
2.16 Concentration questions with a twist.
(a) A silicon wafer is uniformly doped p-type with N₁ = 10¹5/cm³. At T = 0 K, what are
the equilibrium hole and electron concentrations?
(b) A semiconductor is doped with an impurity concentration № such that N »n; and all
the impurities are ionized. Also, n = N and p = n/N. Is the impurity a donor or an
acceptor? Explain.
(c) The electron concentration in a piece of Si maintained at 300 K under equilibrium
conditions is 105/cm³. What is the hole concentration?
(d) For a silicon sample maintained at T = 300 K, the Fermi level is located 0.259 eV
above the intrinsic Fermi level. What are the hole and electron concentrations?
(e) In a nondegenerate germanium sample maintained under equilibrium conditions near
room temperature, it is known that n, 1013/cm³, n == 2p, and N 0. Determine n
and N₁.
Transcribed Image Text:1.Pierret Problem 2.16 2.16 Concentration questions with a twist. (a) A silicon wafer is uniformly doped p-type with N₁ = 10¹5/cm³. At T = 0 K, what are the equilibrium hole and electron concentrations? (b) A semiconductor is doped with an impurity concentration № such that N »n; and all the impurities are ionized. Also, n = N and p = n/N. Is the impurity a donor or an acceptor? Explain. (c) The electron concentration in a piece of Si maintained at 300 K under equilibrium conditions is 105/cm³. What is the hole concentration? (d) For a silicon sample maintained at T = 300 K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are the hole and electron concentrations? (e) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n, 1013/cm³, n == 2p, and N 0. Determine n and N₁.
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 2 steps

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,