18 16 A silicon p-n-p transistor has impurity concentrations of 5x10", 2x10", and 10 cm in the emitter, base, and collector, respectively. The base width is 1.0 um, and the device cross sectional area is 0.2 mm?. When the emitter-base junction is forward biased to 0.5 V, and the base-collector junction is reverse biased to 5 V, calculate (a) calculate the neutral base width, and (b) the minority carrier concentration at the emitter-base junction.

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