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*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ice = 4 mA and VCE = 10 V. a. Rçif Vcc =21V and Rg = 1.2 k2. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc.

*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ice = 4 mA and VCE = 10 V. a. Rçif Vcc =21V and Rg = 1.2 k2. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc = 21V and Rg = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- Ic(mA) 110 µ 10 80 μΑ 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 μ. 4 3 20 HA 2 10 µA 5 10 15 20 25 30 VCE (V) FIG. 4.121
Transcribed Image Text:*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc = 21V and Rg = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- Ic(mA) 110 µ 10 80 μΑ 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 μ. 4 3 20 HA 2 10 µA 5 10 15 20 25 30 VCE (V) FIG. 4.121
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