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12V R1 80k W ធន៍ w R3 330 400 the forward active region has a common emitter current gain term, ß=200 you may assume that VBEon ~ 0.7V w R5 W BJT VCEsat ~ 0.2V 15k R2 40k w R4 200 0 Verify that the transistor is in the Forward Active region of operation for the above circuit. (Hint: Think of how you would apply Thevenin in this circuit.)

12V R1 80k W ធន៍ w R3 330 400 the forward active region has a common emitter current gain term, ß=200 you may assume that VBEon ~ 0.7V w R5 W BJT VCEsat ~ 0.2V 15k R2 40k w R4 200 0 Verify that the transistor is in the Forward Active region of operation for the above circuit. (Hint: Think of how you would apply Thevenin in this circuit.)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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This is a practice problem from my Introduction to Electronics course.

Could you please walk me through the process for solving this (Using Thevenin)?

Thank you for your assistance.

12V R1 80k W ធន៍ w R3 330 400 the forward active region has a common emitter current gain term, ß=200 you may assume that VBEon ~ 0.7V w R5 W BJT VCEsat ~ 0.2V 15k R2 40k w R4 200 0 Verify that the transistor is in the Forward Active region of operation for the above circuit. (Hint: Think of how you would apply Thevenin in this circuit.)
Transcribed Image Text:12V R1 80k W ធន៍ w R3 330 400 the forward active region has a common emitter current gain term, ß=200 you may assume that VBEon ~ 0.7V w R5 W BJT VCEsat ~ 0.2V 15k R2 40k w R4 200 0 Verify that the transistor is in the Forward Active region of operation for the above circuit. (Hint: Think of how you would apply Thevenin in this circuit.)
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