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10. From memory, sketch the transistor symbol for a pnp and an npn transistor, and then insert the conventional flow direction for each current.

10. From memory, sketch the transistor symbol for a pnp and an npn transistor, and then insert the conventional flow direction for each current.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Answer 10 only. Show the process

PROBLEMS *Note: Asterisks indicate more difficult problems. 3.2 Transistor Construction 1. What names are applied to the two types of BJT transistors? Sketch the basic construction of each and label the various minority and majority carriers in each. Draw the graphic symbol next to each. Is any of this information altered by changing from a silicon to a germanium base? 2. What is the major difference between a bipolar and a unipolar device? 3.3 Transistor Operation 3. How must the two transistor junctions be biased for proper transistor amplifier operation? 4. What is the source of the leakage current in a transistor? 5. Sketch a figure similar to Fig. 3.4a for the forward-biased junction of an npn transistor. Describe the resulting carrier motion. 6. Sketch a figure similar to Fig. 3.4b for the reverse-biased junction of an npn transistor. Describe the resulting carrier motion. 7. Sketch a figure similar to Fig. 3.5 for the majority- and minority-carrier flow of an npn transis- tor. Describe the resulting carrier motion. 8. Which of the transistor currents is always the largest? Which is always the smallest? Which two currents are relatively close in magnitude? 9. If the emitter current of a transistor is 8 mA and Ig is 1/100 of Ic, determine the levels of Iç and Ig. 3.4 Common-Base Configuration 10. From memory, sketch the transistor symbol for a pnp and an npn transistor, and then insert the conventional flow direction for each current. 11. Using the characteristics of Fig. 3.7, determine VBE at Ig = 5 mA for VcB = 1, 10, and 20 V. Is it reasonable to assume on an approximate basis that Vcg has only a slight effect on the rela- tionship between VBE and Ig?
Transcribed Image Text:PROBLEMS *Note: Asterisks indicate more difficult problems. 3.2 Transistor Construction 1. What names are applied to the two types of BJT transistors? Sketch the basic construction of each and label the various minority and majority carriers in each. Draw the graphic symbol next to each. Is any of this information altered by changing from a silicon to a germanium base? 2. What is the major difference between a bipolar and a unipolar device? 3.3 Transistor Operation 3. How must the two transistor junctions be biased for proper transistor amplifier operation? 4. What is the source of the leakage current in a transistor? 5. Sketch a figure similar to Fig. 3.4a for the forward-biased junction of an npn transistor. Describe the resulting carrier motion. 6. Sketch a figure similar to Fig. 3.4b for the reverse-biased junction of an npn transistor. Describe the resulting carrier motion. 7. Sketch a figure similar to Fig. 3.5 for the majority- and minority-carrier flow of an npn transis- tor. Describe the resulting carrier motion. 8. Which of the transistor currents is always the largest? Which is always the smallest? Which two currents are relatively close in magnitude? 9. If the emitter current of a transistor is 8 mA and Ig is 1/100 of Ic, determine the levels of Iç and Ig. 3.4 Common-Base Configuration 10. From memory, sketch the transistor symbol for a pnp and an npn transistor, and then insert the conventional flow direction for each current. 11. Using the characteristics of Fig. 3.7, determine VBE at Ig = 5 mA for VcB = 1, 10, and 20 V. Is it reasonable to assume on an approximate basis that Vcg has only a slight effect on the rela- tionship between VBE and Ig?
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