1.19 (a) Determine the built-in potential barrier Vi in a silicon pn junction for (i)Na = Na = 5 x 105 cm-3; (ii) Na = 5 x 10" cm-3 and N. = 105 cm;(iii) N. = Na = 10 cm. (b) Repeat part (a) for GaAs.

The built in potential barrier is given as,Vbi=VTlnNaNdni2

Answered: 1.19 (a) Determine the built-in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
Sketch the pn junction energy band diagram in equilibrium (zero bias) showing the Fermi level as a flat horizontal line. Review the meaning of the Fermi level and position of Fermi level in p and n type semiconductors.
Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given by
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Ext.sc
Problem 2 In a P-type semiconductor, the Fermi level is 0.3 eV above the valance band at a room temperature of 300 "K. Determine the new position of the Fermi level for temperatures of (a) 350 "K and (b) 400 "K. The Fermi level in a P-type material is given by
For a germanium diode carrying 10 mA, at a room temperature of 20 degrees centigrade, the required forward bias voltage is about 0.2 V. Match one appropriate estimate to a given description. Forward current (mA) at a bias Choose.. voltage of 0.258 V Bias voltage (V) for 80 mA Choose... + Forward Ac resistance (Ohms) Choose... + Choose.. Reverse saturation current (uA) Choose.. + Bias voltage (V) for 2 mA Choose... +

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1.19 (a) Determine the built-in potential barrier V in a silicon pn junction for (i) Na = N. = 5 x 10 cm-: (ii) Na =5 x 10" em and N. - 10" em (ii) N, - Na = 10" cm. (b) Repeat part (a) for GaAs.