1.19 (a) Determine the built-in potential barrier Vi in a silicon pn junction for (i)Na = Na = 5 x 105 cm-3; (ii) Na = 5 x 10" cm-3 and N. = 105 cm;(iii) N. = Na = 10 cm. (b) Repeat part (a) for GaAs.

The built in potential barrier is given as,Vbi=VTlnNaNdni2

Answered: 1.19 (a) Determine the built-in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
Sketch the pn junction energy band diagram in equilibrium (zero bias) showing the Fermi level as a flat horizontal line. Review the meaning of the Fermi level and position of Fermi level in p and n type semiconductors.
2. A silicon specimen is doped with 4.73 x1010/cm³ Antimony and 3.57x101%cm³ Aluminum. a) Calculate free electron and hole #Icm³ concentrations. b) Determine specimen conductivity type (n or p).
1) Describe how to make n- and p-type semiconductors for silicon. 2) Describe the location of the Fermi energy levels in the band gap for n-type and p-type semiconductors.
QUESTION 1 a) b) c) Define briefly the terms ionization and electron-hole pair (EHP). Draw the energy band diagram of metal, semiconductor and insulator. Discuss on how the energy gap affect their conductivity. Sketch the current-voltage characteristic of Si diode.
Problem 2 In a P-type semiconductor, the Fermi level is 0.3 eV above the valance band at a room temperature of 300 "K. Determine the new position of the Fermi level for temperatures of (a) 350 "K and (b) 400 "K. The Fermi level in a P-type material is given by
Which statement(s) is (are) true about a P-N junction: A. P-N junction consists of n-type and p-type semiconductor materials.B. Free electrons in n-type diffuse across junction to p-type.C. A depletion region formation happens due to electrons and holes moving away from each other due to the electric field.
Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: Germanium Temperature: 206 (K)
Acceptor type impurities will be added to this doped semiconductor material. For the following different acceptor impurity concentrations, find the conductivity of the material in terms of o and draw the energy band diagram clearly indicating the ii. approximate position of the Fermi level. Assume that electron and hole mobilities remain same for total doping concentration levels between 10" and 105 atoms/cm. a. Na-5x10" atoms/cm b. Na-104 atoms/cm
Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?
Explain what is meant by the intrinsic regime of a doped semiconductor, and whether this behaviour is seen for all temperatures.

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1.19 (a) Determine the built-in potential barrier V in a silicon pn junction for (i) Na = N. = 5 x 10 cm-: (ii) Na =5 x 10" em and N. - 10" em (ii) N, - Na = 10" cm. (b) Repeat part (a) for GaAs.