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1.17 The hole concentration in silicon is given by P(x) = 10* + 105 exp(-x/L,) The value of Lp is 10 um. The hole diffusion coefficient is D, = 15 cm/s. Determine the hole diffusion current density at (a) x = 0, (b) x = 10um, and (c) x = 30 um. x20

1.17 The hole concentration in silicon is given by P(x) = 10* + 105 exp(-x/L,) The value of Lp is 10 um. The hole diffusion coefficient is D, = 15 cm/s. Determine the hole diffusion current density at (a) x = 0, (b) x = 10um, and (c) x = 30 um. x20

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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1.17 The hole concentration in silicon is given by P(x) = 10* + 105 exp(-x/L,) The value of Lp is 10 um. The hole diffusion coefficient is D, = 15 cm/s. Determine the hole diffusion current density at (a) x = 0, (b) x = 10um, and (c) x = 30 um. x20
Transcribed Image Text:1.17 The hole concentration in silicon is given by P(x) = 10* + 105 exp(-x/L,) The value of Lp is 10 um. The hole diffusion coefficient is D, = 15 cm/s. Determine the hole diffusion current density at (a) x = 0, (b) x = 10um, and (c) x = 30 um. x20
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