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1.13 Boron atoms are added to a Si film resulting in an impurity density of 4 × 1016 cm³. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (c) Why does the mobile carrier concentration increase at high temperatures? (d) Where is the Fermi level located if T = 600 K?

1.13 Boron atoms are added to a Si film resulting in an impurity density of 4 × 1016 cm³. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (c) Why does the mobile carrier concentration increase at high temperatures? (d) Where is the Fermi level located if T = 600 K?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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1.13 Boron atoms are added to a Si film resulting in an impurity density of 4 × 1016 cm³. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (c) Why does the mobile carrier concentration increase at high temperatures? (d) Where is the Fermi level located if T = 600 K?
Transcribed Image Text:1.13 Boron atoms are added to a Si film resulting in an impurity density of 4 × 1016 cm³. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (c) Why does the mobile carrier concentration increase at high temperatures? (d) Where is the Fermi level located if T = 600 K?
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