1. The PN junction diode D1 and D2 has the maximum power Pmax -14 mW. D1 Si Imar 160 V D2 4.7kQ 68ka Si a. Find the maximum current that can pass through the each diode. b. Determine Imax from the parallel diodes. c. Determine the current through the each resistor.

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The PN junction diode D1 and D2 has the maximum power Pmax -14
5+5
mW.
D1
Imax
160 V
S4.7kQ
68kn
a. Find the maximum current that can pass through the each diode.
b. Determine Imus from the parallel diodes.
c. Determine the current through the each resistor.
The intrinsic carrier density of Germanium and Silicon are
2.5x101m and 1.6x10m-3 respectively. The mobility of electron
and hole are 0.38m²v-!s- and 0.18m²v-'s-'respectively. Find the
values of conductivity for both Germanium and Silicon.
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Transcribed Image Text:Section (Module - 2] 2 of 3 Question :1 of 1 Marks for this Question: 10 A Upload answer sheets The PN junction diode D1 and D2 has the maximum power Pmax -14 5+5 mW. D1 Imax 160 V S4.7kQ 68kn a. Find the maximum current that can pass through the each diode. b. Determine Imus from the parallel diodes. c. Determine the current through the each resistor. The intrinsic carrier density of Germanium and Silicon are 2.5x101m and 1.6x10m-3 respectively. The mobility of electron and hole are 0.38m²v-!s- and 0.18m²v-'s-'respectively. Find the values of conductivity for both Germanium and Silicon. Once you upload files from your second device, click on C Sync to check your submission O Camera Finish Clear Response
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