1. See example 4.2 on page 112. For silicon at 300 K, calculate the clectron concentration, no for the following scenarios. Ec- EF=0.25 eV Ec- Er-0.35 eV b. Ec- Er- 0.45 eV Calculate the hole concentration, po for the following d. EF-Ev=0.25 eV EF-Ev- 0.35 eV Er -Ev=0.45 eV
1. See example 4.2 on page 112. For silicon at 300 K, calculate the clectron concentration, no for the following scenarios. Ec- EF=0.25 eV Ec- Er-0.35 eV b. Ec- Er- 0.45 eV Calculate the hole concentration, po for the following d. EF-Ev=0.25 eV EF-Ev- 0.35 eV Er -Ev=0.45 eV
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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D e f only
Take NV=1.04x(10^19)
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