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1. rB = 2.5 Q Vin = 10 V R= 100 Q Required: V and I using 1s, 2n0, and 3rd approximations (assume a Si diode)

1. rB = 2.5 Q Vin = 10 V R= 100 Q Required: V and I using 1s, 2n0, and 3rd approximations (assume a Si diode)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Solve for the required parameters :

1. rB = 2.5 Q Vin = 10 V R= 100 Q Required: V and I using 1st, 2nº, and 3rd approximations (assume a Si diode) 2. Si Ge KIKH Vin = 12 V R= 5.6 kQ Required: output voltage and diode current 3. Find the current value, V1,V2, and Vo. R1 = 4.7 k. o Vo Vin = 10 V R2= 2.2 kQ - 5 V
Transcribed Image Text:1. rB = 2.5 Q Vin = 10 V R= 100 Q Required: V and I using 1st, 2nº, and 3rd approximations (assume a Si diode) 2. Si Ge KIKH Vin = 12 V R= 5.6 kQ Required: output voltage and diode current 3. Find the current value, V1,V2, and Vo. R1 = 4.7 k. o Vo Vin = 10 V R2= 2.2 kQ - 5 V
4. Find Vo , I, Io1, and Io2. Use practical diode model. R1 = 0.33 kQ Vin = 10 V V. 5. Using 2nd approximation, find current I. D1, Si R = 2.2 k. E2 = 4 v E1 = 20 v Dz, Si 6. Find V. using practical diode model. D1, Si V. E1 = 12 v R1 = 2.2 k. D2, Ge
Transcribed Image Text:4. Find Vo , I, Io1, and Io2. Use practical diode model. R1 = 0.33 kQ Vin = 10 V V. 5. Using 2nd approximation, find current I. D1, Si R = 2.2 k. E2 = 4 v E1 = 20 v Dz, Si 6. Find V. using practical diode model. D1, Si V. E1 = 12 v R1 = 2.2 k. D2, Ge
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