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1. If VBR in Figure 5-7 is increased, the Q-point value of collector current will (b) decrease (c) not change (a) increase 2. If VBB in Figure 5-7 is increased, the Q-point value of VCE will (b) decrease (c) not change (a) increase 3. If the value of R2 in Figure 5–10 is reduced, the base voltage will (a) increase (b) decrease (c) not change 4. If the value of R in Figure 5-10 is increased, the emitter current will (a) increase (b) decrease (c) not change 5. If Re in Figure 5-15 is decreased, the collector current will (c) not change (a) increase (b) decrease 9. In an emitter bias circuit, Rp = 2.7 kN and VEg = 15 V. The emitter current (a) "is 5,3 mA (b) is 2.7 mA (e) is 180 mA (d) cannot be determined D. The disadvantage of base bias is that (a) it is very complex (e) itistoo beta đependent» (d) it produces high leakage current 1. Collector-feedback bias is (b) it produces low gain (a) based on the principle of positive feedback (C) based on the principle of negative feedback 2. In a voltage-divider biased npn transistor, if the upper voltage-divider resistor (the one con- nected to Vec) opens, (b) based on beta multiplication (d) not very stable (a) the transistor goes into cutoff (b) the transistor goes into saturation (c) the transistor burns out (d) the supply voltage is too high

1. If VBR in Figure 5-7 is increased, the Q-point value of collector current will (b) decrease (c) not change (a) increase 2. If VBB in Figure 5-7 is increased, the Q-point value of VCE will (b) decrease (c) not change (a) increase 3. If the value of R2 in Figure 5–10 is reduced, the base voltage will (a) increase (b) decrease (c) not change 4. If the value of R in Figure 5-10 is increased, the emitter current will (a) increase (b) decrease (c) not change 5. If Re in Figure 5-15 is decreased, the collector current will (c) not change (a) increase (b) decrease 9. In an emitter bias circuit, Rp = 2.7 kN and VEg = 15 V. The emitter current (a) "is 5,3 mA (b) is 2.7 mA (e) is 180 mA (d) cannot be determined D. The disadvantage of base bias is that (a) it is very complex (e) itistoo beta đependent» (d) it produces high leakage current 1. Collector-feedback bias is (b) it produces low gain (a) based on the principle of positive feedback (C) based on the principle of negative feedback 2. In a voltage-divider biased npn transistor, if the upper voltage-divider resistor (the one con- nected to Vec) opens, (b) based on beta multiplication (d) not very stable (a) the transistor goes into cutoff (b) the transistor goes into saturation (c) the transistor burns out (d) the supply voltage is too high

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Answeis Lal vE IVM * 1. If VBB in Figure 5-7 is increased, the Q-point value of collector current will (b) decrease (c) not change (a) increase 2. If VBB in Figure 5-7 is increased, the Q-point value of VCE will (b) decrease (a) increase (c) not change 3. If the value of R2 in Figure 5-10 is reduced, the base voltage will (a) increase (b) decrease (c) not change 4. If the value of R in Figure 5–10 is increased, the emitter current will (a) increase (b) decrease (c) not change 5. If Re in Figure 5-15 is decreased, the collector current will (c) not change (a) increase (b) decrease 9. In an emitter bias circuit, Rp = 2.7 kfN and VEE = 15 V. The emitter current (4) i« 5,3 mA (b) is 2.7 mA (e) is 180 mA (d) cannot be determined 10. The disadvantage of base bias is that (a) it is very complex (b) it produces low gain (e) itistoo beta dependent» (d) it produces high leakage current 11. Collector-feedback bias is (a) based on the principle of positive feedback (C) based on the principle of negative feedback 12. In a voltage-divider biased npn transistor, if the upper voltage-divider resistor (the one con- nected to Vec) opens, (b) based on beta multiplication (d) not very stable (a) the transistor goes into cutoff (b) the transistor goes into saturation (c) the transistor burns out (d) the supply voltage is too high
Transcribed Image Text:Answeis Lal vE IVM * 1. If VBB in Figure 5-7 is increased, the Q-point value of collector current will (b) decrease (c) not change (a) increase 2. If VBB in Figure 5-7 is increased, the Q-point value of VCE will (b) decrease (a) increase (c) not change 3. If the value of R2 in Figure 5-10 is reduced, the base voltage will (a) increase (b) decrease (c) not change 4. If the value of R in Figure 5–10 is increased, the emitter current will (a) increase (b) decrease (c) not change 5. If Re in Figure 5-15 is decreased, the collector current will (c) not change (a) increase (b) decrease 9. In an emitter bias circuit, Rp = 2.7 kfN and VEE = 15 V. The emitter current (4) i« 5,3 mA (b) is 2.7 mA (e) is 180 mA (d) cannot be determined 10. The disadvantage of base bias is that (a) it is very complex (b) it produces low gain (e) itistoo beta dependent» (d) it produces high leakage current 11. Collector-feedback bias is (a) based on the principle of positive feedback (C) based on the principle of negative feedback 12. In a voltage-divider biased npn transistor, if the upper voltage-divider resistor (the one con- nected to Vec) opens, (b) based on beta multiplication (d) not very stable (a) the transistor goes into cutoff (b) the transistor goes into saturation (c) the transistor burns out (d) the supply voltage is too high
FIGURE 5-7 Rc 330 N RB Vcc 20 V 47 kN VBB 10 V FIGURE 5-10 Vcc +10 V Rc 1.0 kN 10 kΩ R2 5.6 kN RE 560 2 ster The base voltage is
Transcribed Image Text:FIGURE 5-7 Rc 330 N RB Vcc 20 V 47 kN VBB 10 V FIGURE 5-10 Vcc +10 V Rc 1.0 kN 10 kΩ R2 5.6 kN RE 560 2 ster The base voltage is
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