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1. A Ge pn junction is doped with acceptor doping of 105 em and donor doping of 1015 em Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm/s, and D, = 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n, b) Built in potential. c) The saturation current Is. %3D

1. A Ge pn junction is doped with acceptor doping of 105 em and donor doping of 1015 em Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm/s, and D, = 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n, b) Built in potential. c) The saturation current Is. %3D

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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1. A Ge pn junction is doped with acceptor doping of 1015 cm and donor doping of 1018 cm3. Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm?/s, and D, = 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n b) Built in potential. c) The saturation current Is.
Transcribed Image Text:1. A Ge pn junction is doped with acceptor doping of 1015 cm and donor doping of 1018 cm3. Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm?/s, and D, = 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n b) Built in potential. c) The saturation current Is.
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