1. (a) Calculate and plot J-V characteristic for a Si p-n junction diode with series resistance Rs-1.5 Ohms, diode ideal factor n-1.15, donor and acceptor concentrations 5e16 and T-350K. To calculate saturation current density use p-n junction saturation current equation with diffusion coefficient D and diffusion length L (check notes). To calculate D and L, use carrier mobility (electron and hole) u-350 cm^2/(V s) and lifetime t- 300 us. Use the voltage range 0- 3Vand step 0.01V. (b) Calculate forward bias voltage at 0.1 A/cm^2 current density. (c) Calculate current density at 3 V reverse bias. You can use a computer, KaleidaGraph, etc.

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1. (a) Calculate and plot J-V characteristic for a Si p-n junction diode with series resistance Rs-1.5 Ohms, diode ideal
factor n-1.15, donor and acceptor concentrations 5e16 and T-350K. To calculate saturation current density use p-n
junction saturation current equation with diffusion coefficient D and diffusion length L (check notes). To calculate D
and L. use carrier mobility (electron and hole) u-350 cm^2/(V s) and lifetime t- 300 us. Use the voltage range 0-
3Vand step 0.01V. (b) Calculate forward bias voltage at 0.1 A/cm^2 current density. (c) Calculate current density at 3
V reverse bias. You can use a computer, KaleidaGraph, etc.
Transcribed Image Text:1. (a) Calculate and plot J-V characteristic for a Si p-n junction diode with series resistance Rs-1.5 Ohms, diode ideal factor n-1.15, donor and acceptor concentrations 5e16 and T-350K. To calculate saturation current density use p-n junction saturation current equation with diffusion coefficient D and diffusion length L (check notes). To calculate D and L. use carrier mobility (electron and hole) u-350 cm^2/(V s) and lifetime t- 300 us. Use the voltage range 0- 3Vand step 0.01V. (b) Calculate forward bias voltage at 0.1 A/cm^2 current density. (c) Calculate current density at 3 V reverse bias. You can use a computer, KaleidaGraph, etc.
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