1 V ZV M -2 V M2 4 V 640uA
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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The n-channel FETs below have K n’ = 100μA/V^2, W = 60μm, L = 3μm, Vt = 0.7V, and λ
= 0.03V ^-1.
a) Label the source, gate, and drain with S, G, and D respectively for M1 and M2
b) What is the region of operation of MOSFET M1?
c) neglecting channel-length modulation (λ = 0), what is I D of M1?
d) M2 is in saturation with I D = 640μA (neglecting λ). What is V G of M2?
e) What is the current, I D, of M2 taking channel length modulation into consideration?

Transcribed Image Text:The image displays two NMOS transistors, labeled M1 and M2, each in different configurations.
**Transistor M1:**
- **Gate Voltage (Vgs):** The gate has a voltage of 2 V.
- **Source Voltage (Vs):** The source is at a voltage of 1 V.
- **Drain Voltage (Vd):** The drain is grounded at -2 V.
**Transistor M2:**
- **Gate-Source Voltage (Vgs):** Presented without explicit value; it's essential to calculate based on other voltages.
- **Drain Voltage (Vd):** 4 V.
- **Drain Current (Id):** 640 µA.
These configurations illustrate typical setups in transistor operation, focusing on the relationship between gate voltage, source voltage, and current flow through the drain. Understanding these parameters is crucial for analyzing transistor behavior in electronic circuits.
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