01. Figure shows a p-type silicon semiconductor of area 1um x 1um is subjected to electron injection from the left side and holes injection from the right side. Total current flowing through the device is Given D, = 34cm / sec HA D. = 12cm / sec 5x 10" cm 2x10" cm Electrons + holes X 2um

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ColeY
Dedgnd
Ende d
Pages Pvius Net
Ense
01. Figure shows a p-type silicon semiconductor of area 1um x 1um is subjected to electron injection from the left
side and holes injection from the right side. Total current flowing through the device is
Given D, = 34cm / sec
D. = 12cm / sec
5x 10" cm
2x101" cm
Electrons
E holes
O -
2μm
Transcribed Image Text:ColeY Dedgnd Ende d Pages Pvius Net Ense 01. Figure shows a p-type silicon semiconductor of area 1um x 1um is subjected to electron injection from the left side and holes injection from the right side. Total current flowing through the device is Given D, = 34cm / sec D. = 12cm / sec 5x 10" cm 2x101" cm Electrons E holes O - 2μm
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