Fundamentals of Applied Electromagnetics (7th Edition)
7th Edition
ISBN: 9780133356816
Author: Fawwaz T. Ulaby, Umberto Ravaioli
Publisher: PEARSON
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Chapter 8.2, Problem 4E
In the visible part of the electromagnetic spectrum, the index of refraction of water is 1.33. What is the critical angle for light waves generated by an upward-looking underwater light source?
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A Darlington Pair consists of two transistors with the first BJT driving the base terminal of the second transistor as shown in the picture provided. What does the curve trace for a Darlington Pair of Bipolar Junction Transistors look like?
Chapter 8 Solutions
Fundamentals of Applied Electromagnetics (7th Edition)
Ch. 8.1 - Prob. 1CQCh. 8.1 - In the radar radome design of Example 8-1, all the...Ch. 8.1 - Explain on the basis of boundary conditions why it...Ch. 8.1 - Prob. 1ECh. 8.1 - Prob. 2ECh. 8.1 - Obtain expressions for the average power densities...Ch. 8.2 - In the visible part of the electromagnetic...Ch. 8.2 - If the light source of Exercise 8-4 is situated at...Ch. 8.3 - If the index of refraction of the cladding...Ch. 8.4 - Prob. 4CQ
Ch. 8.4 - What is the difference between the boundary...Ch. 8.4 - Why is the Brewster angle also called the...Ch. 8.4 - At the boundary, the vector sum of the tangential...Ch. 8.4 - A wave in air is incident upon a soil surface at i...Ch. 8.4 - Determine the Brewster angle for the boundary of...Ch. 8.4 - Prob. 9ECh. 8.8 - What are the primary limitations of coaxial cables...Ch. 8.8 - Can a TE mode have a zero magnetic field along the...Ch. 8.8 - What is the rationale for choosing a solution for...Ch. 8.8 - What is an evanescent wave?Ch. 8.8 - For TE waves, the dominant mode is TE10, but for...Ch. 8.8 - Prob. 10ECh. 8.8 - Prob. 11ECh. 8.8 - Prob. 12ECh. 8.10 - Why is it acceptable for up to exceed the speed of...Ch. 8.10 - Prob. 13ECh. 8.10 - Prob. 14ECh. 8 - A plane wave in air with an electric field...Ch. 8 - A plane wave traveling in medium 1 with r1 = 2.25...Ch. 8 - A plane wave traveling in a medium with r1 = 9 is...Ch. 8 - A 200 MHz, left-hand circularly polarized plane...Ch. 8 - Prob. 5PCh. 8 - A 50 MHz plane wave with electric field amplitude...Ch. 8 - What is the maximum amplitude of the total...Ch. 8 - Repeat Problem 8.6, but replace the dielectric...Ch. 8 - Prob. 9PCh. 8 - Prob. 10PCh. 8 - Repeat Problem 8.10, but interchange r1 and r3.Ch. 8 - Orange light of wavelength 0.61 m in air enters a...Ch. 8 - A plane wave of unknown frequency is normally...Ch. 8 - Consider a thin film of soap in air under...Ch. 8 - A 5 MHz plane wave with electric field amplitude...Ch. 8 - Prob. 16PCh. 8 - Prob. 17PCh. 8 - Prob. 18PCh. 8 - Prob. 19PCh. 8 - Prob. 20PCh. 8 - Prob. 21PCh. 8 - Prob. 22PCh. 8 - Prob. 23PCh. 8 - Prob. 24PCh. 8 - Prob. 25PCh. 8 - Prob. 26PCh. 8 - A plane wave in air with E=y20ej(3x+4z) (V/m) is...Ch. 8 - Prob. 28PCh. 8 - A plane wave in air with Ei=(x9y4z6)ej(2x+3z)(V/m)...Ch. 8 - Natural light is randomly polarized, which means...Ch. 8 - A parallel-polarized plane wave is incident from...Ch. 8 - A perpendicularly polarized wave in air is...Ch. 8 - Show that the reflection coefficient can be...Ch. 8 - Prob. 34PCh. 8 - Prob. 35PCh. 8 - A 50 MHz right-hand circularly polarized plane...Ch. 8 - Consider a flat 5 mm thick slab of glass with r =...Ch. 8 - Derive Eq. (8.89b).Ch. 8 - Prob. 39PCh. 8 - A TE wave propagating in a dielectric-filled...Ch. 8 - Prob. 41PCh. 8 - Prob. 42PCh. 8 - Prob. 43PCh. 8 - Prob. 44PCh. 8 - Prob. 45PCh. 8 - Prob. 46PCh. 8 - Prob. 47P
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- 3) A circuit is given as shown. (a) Find and label the circuit nodes. (6) Determine V2, V2, I₂, I₂ and Is © For each circuit element determine how much power it Supplies 15 absorbs. m 20 + 20 www 13 + 20 Z9V H 56 +1 LOV 1/2 1 4A + 3_22 3.2 ми + V₂ I 1arrow_forwardIn this experiment, we are going to use a 2N3904 BJT. Examine the data sheet for this device carefully. In particular, make a note of the current gain (identified by hFE). 1. Obtain the curve trace for a "Darlington Pair" of Bipolar Junction Transistors. A Darlington Pair consists of two transistors with the first BJT driving the base terminal of the second transistor as shown in Figure 1 below. A. Set up the primary sweep voltages for V1 the same as shown in the lecture notes (see the Darlington pair IV curve). B. Set up the secondary sweep currents for 11 to be an order of magnitude smaller than for the single BJT. In the Sweep Type box choose linear and enter the following 3 values: Start Value: 0, End Value: 8u and Increment: 1u (see lecture notes). C. Describe the primary differences you observe between the single BJT Curve Trace and that of the Darlington Pair. Discuss what might cause each difference. Q1 11 Q2 V1 Q2N3904 Figure 1. A Darlington Pair of 2N3904 transistors in a…arrow_forward2. Using the IV plots shown in Fig. 3 (and found in the reintroduction to PSpice) design a BJT biasing circuit that results in the following parameters: VCE = 2 Vand ig = 40 μA. We also require the power supply to be fixed at 5 Volts (this is where the load line intercepts the iB =ic = 0 line). You may use the circuit shown in Example 1. Note that all resistor values in Example 1 must be recalculated. Your solution for the base to ground and base to collector resistors may not be unique.arrow_forward
- A circuit is given as shown. (a) Find and label the circuit nodes. (6) Determine I, I₁, I2 and V₂ I₂ +1 I 12V ww 22 2 ти + 보통 162 - ти 4 52 12 50 602 I 1 Mwarrow_forwarda) A silicon wafer is uniformly doped p-type with NA=10¹³/cm³. At T=0K, what are the equilibrium hole and electron concentrations?arrow_forward1016 1015 Ge 101 Si 1013 1012 GaAs 10" (( uວ) uot¤ງແລ້ວuo ວາ.ຂ ວາsuuuT 0101 601 801 107 10% Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following conditions. (n; =1010/cm³ at 300K) a) T 300 K, NA << ND, ND = 1015/cm³ b) T 300 K, NA = 9X1015/cm³, ND = 1016/cm³ c) T = 450 K, NA = 0, ND = 1014/cm³ d) T = 650 K, NA = 0, ND = 1014/cm³ 10° 200 300 400 500 600 700 T(K)arrow_forward
- b) A semiconductor is doped with an impurity concentration N such that N >> n; and all the impurities are ionized. Also, n = N and p = n2/N. Is the impurity a donor or an acceptor? Explain.arrow_forwardd) For a silicon sample maintained at T=300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are the hole and electron concentrations?arrow_forwarde) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n=10¹³/cm³, n = 2p, and NA 0. Determine n and ND.arrow_forward
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