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Chapter 8, Problem 8QAP
To determine

The maximum allowable surface crack length.

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6.1 Consider silicon at 7 = 300 K that is doped with donor impurity atoms to a concentra- tion of Na = 5 x 105 cm³. The excess carrier lifetime is 2 x 10-'s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that Sn = p = 104 cm³. What is the recombination rate of holes for this condition?
A punch press with flywheel adequate to minimize speed fluctuation produces 120 punching strokes per minute, each providing an average force of 2000 N over a stroke of 50 mm. The press is driven through a gear reducer by a shaft rotating 200 rpm. Overall efficiency is 80%. a) What power (W) is transmitted through the shaft? b) What average torque is applied to the shaft?
6.18 A semiconductor is uniformly doped with 107 cm³ acceptor atoms and has the fol- lowing properties: D = 27 cm²/s, D = 12 cm²/s, T = 5 × 10-7 s, and 7po = 10-7 s. An external source has been turned on for 1 <0 producing a uniform concentration of excess carriers at a generation rate of g = 10 cm³ s. The source turns off at time 1 = 0 and back on at time = 2 × 10-6 s. (a) Derive the expressions for the excess carrier concentration as a function of time for 01, (b) Determine the value of excess carrier concentration at (i) 1 = 0, (ii) 1 = 2 × 10-6 s, and (iii) t = x. (c) Plot the excess carrier concentration as a function of time.
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