Engineering Electromagnetics
9th Edition
ISBN: 9781260029963
Author: Hayt
Publisher: MCG
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Chapter 5, Problem 5.26P
A semiconductor sample has a rectangular cross section 1.5 by 2.0 mm, length of 11.0. The material has electron and hole densities of 1.8Ă—1018 and 3.0Ă—1015, respectively. If μe=0.082m2/V.s and μn=0.0021m2/V.s, find the resistance offerd between the end faces of the sample.
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Chapter 5 Solutions
Engineering Electromagnetics
Ch. 5 - Prob. 5.1PCh. 5 - Given J=-10-4 (yaxx+ya) A/m2, find the current...Ch. 5 - A solid sphere of radius b contains charge Q....Ch. 5 - Prob. 5.4PCh. 5 - Consider the following time-varying current...Ch. 5 - Prob. 5.6PCh. 5 - Prob. 5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - A large brass washer has a 2-cm inside diameter, a...
Ch. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - A rectangular conducting plate lies in the xy...Ch. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Consider the serup as in Problem 5.15, except find...Ch. 5 - Prob. 5.18PCh. 5 - Consider the as in Problem 5.8, except find R by...Ch. 5 - Consider the basic image problem of a point charge...Ch. 5 - Let the surface y=0 be a perfect conductor in free...Ch. 5 - The line segment x=0, -1≤y≤1, z=1, carries a...Ch. 5 - A dipole with P=0.1azμC. m is located at A(1,0,0)...Ch. 5 - At a certain temperature, the electron and hole...Ch. 5 - Electron and hole concentration increase with...Ch. 5 - A semiconductor sample has a rectangular cross...Ch. 5 - Atomic hydrogen contains 5.5Ă—1023 atoms/m at a...Ch. 5 - Find the dielectric constant of a material an...Ch. 5 - A coaxial conductor has radii a=0.8mm and b=3 mm...Ch. 5 - Consider a composite material made up of two...Ch. 5 - Prob. 5.31PCh. 5 - Two equal but p\opposite-sign point charges of...Ch. 5 - Two perfect dielectrics have relative...Ch. 5 - A sphere of radius b and dielectric constant £r...Ch. 5 - Prob. 5.35P
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- A silicon semiconductor has a shape of a rectangular bar with a cross sectional area of 1x10-6cm2 and a lenght of 0.1 cm. How do i calculate the current through the semiconductor if a basis of 5 volts is applied across its length?arrow_forwardProblem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given byarrow_forwardThe conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?arrow_forward
- Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?arrow_forward6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cmarrow_forwardA bar of p-type silicon, has a cross-sectional area A = 10.6 cm and a length L=1.2*10^ -3 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) Impurity doping concentration? (d) What is the resulting hole mobilityarrow_forward
- The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.arrow_forwardfill in the blanksarrow_forward9.A semiconducting crystal with 12 mm long, 5 mm wide and 1 mm thick has a magnetic density of 0.5 Wbm-2 applied from front to back perpendicular to largest faces. current of 20 mA flows When a length wise through the specimen, measured across its width the voltage is found to be 37uV. What is the Hall coefficient of this semiconductor?arrow_forward
- Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3arrow_forwardThe equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.arrow_forwardsemiconductorsarrow_forward
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