the functional dependencies in the Session table and to convert the table in Third Normal Form.

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Chapter 5, Problem 3SPTC

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To determine the functional dependencies in the Session table and to convert the table in Third Normal Form.

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6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

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