University Physics with Modern Physics Plus Mastering Physics with eText -- Access Card Package (14th Edition)
14th Edition
ISBN: 9780321982582
Author: Hugh D. Young, Roger A. Freedman
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 42, Problem 42.23DQ
To determine
Why the saturation current for a p-n junction depends strongly on temperature.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
At T=300K, the electron concentration of a semiconductor material
is n, = 10" cm*. The bandgap energy E=1.leV, Nc =2.8×10" cm, and
N, =1.0x10" cm³.
(1) Determine the hole concentration P. . Is this n-type or p-type
semiconductor?
(2) Determine E F – EF ;
(3) What is the dopant concentration, N, or .? (Please evaluate N, or N.)
(a) A forward-bias voltage of 15.0 mV produces a positive current of 9.25 mA through a p-n junction at 300 K. What does the positive current become if the forward-bias voltage is reduced to 10.0 mV? (b) For reverse-bias voltages of -15.0 mV and -10.0 mV, what is the reverse-bias negative current?
Inert concentration in germanium semiconductor material at T=400K(x10^14 per cm^3)?
Chapter 42 Solutions
University Physics with Modern Physics Plus Mastering Physics with eText -- Access Card Package (14th Edition)
Ch. 42.1 - If electrons obeyed the exclusion principle but...Ch. 42.2 - Prob. 42.2TYUCh. 42.3 - Prob. 42.3TYUCh. 42.4 - One type of thermometer works by measuring the...Ch. 42.5 - Prob. 42.5TYUCh. 42.6 - Prob. 42.6TYUCh. 42.7 - Suppose a negative charge is placed on the gate of...Ch. 42 - Van der Waals bonds occur in many molecules, but...Ch. 42 - Prob. 42.2DQCh. 42 - The H2+ molecule consists of two hydrogen nuclei...
Ch. 42 - The moment of inertia for an axis through the...Ch. 42 - Prob. 42.5DQCh. 42 - Prob. 42.6DQCh. 42 - Prob. 42.7DQCh. 42 - The air you are breathing contains primarily...Ch. 42 - Prob. 42.9DQCh. 42 - Prob. 42.10DQCh. 42 - What factors determine whether a material is a...Ch. 42 - Prob. 42.12DQCh. 42 - Prob. 42.13DQCh. 42 - Prob. 42.14DQCh. 42 - Prob. 42.15DQCh. 42 - Prob. 42.16DQCh. 42 - Prob. 42.17DQCh. 42 - Prob. 42.18DQCh. 42 - Prob. 42.19DQCh. 42 - Prob. 42.20DQCh. 42 - Prob. 42.21DQCh. 42 - Prob. 42.22DQCh. 42 - Prob. 42.23DQCh. 42 - Prob. 42.24DQCh. 42 - If the energy of the H2 covalent bond is 4.48 eV,...Ch. 42 - An Ionic Bond, (a) Calculate the electric...Ch. 42 - Prob. 42.3ECh. 42 - Prob. 42.4ECh. 42 - Prob. 42.5ECh. 42 - Prob. 42.6ECh. 42 - Prob. 42.7ECh. 42 - Two atoms of cesium (Cs) can form a Cs2 molecule....Ch. 42 - Prob. 42.9ECh. 42 - Prob. 42.10ECh. 42 - A lithium atom has mass 1.17 1026 kg, and a...Ch. 42 - Prob. 42.12ECh. 42 - When a hypothetical diatomic molecule having atoms...Ch. 42 - The vibrational and rotational energies of the CO...Ch. 42 - Prob. 42.15ECh. 42 - Prob. 42.16ECh. 42 - Prob. 42.17ECh. 42 - Prob. 42.18ECh. 42 - Prob. 42.19ECh. 42 - Prob. 42.20ECh. 42 - Prob. 42.21ECh. 42 - Prob. 42.22ECh. 42 - Prob. 42.23ECh. 42 - Prob. 42.24ECh. 42 - Prob. 42.25ECh. 42 - Prob. 42.26ECh. 42 - Prob. 42.27ECh. 42 - Prob. 42.28ECh. 42 - Prob. 42.29ECh. 42 - Prob. 42.30ECh. 42 - Prob. 42.31ECh. 42 - Prob. 42.32ECh. 42 - Prob. 42.33PCh. 42 - Prob. 42.34PCh. 42 - Prob. 42.35PCh. 42 - The binding energy of a potassium chloride...Ch. 42 - (a) For the sodium chloride molecule (NaCl)...Ch. 42 - Prob. 42.38PCh. 42 - Prob. 42.39PCh. 42 - Prob. 42.40PCh. 42 - Prob. 42.41PCh. 42 - Prob. 42.42PCh. 42 - Prob. 42.43PCh. 42 - Prob. 42.44PCh. 42 - Prob. 42.45PCh. 42 - Prob. 42.46PCh. 42 - Prob. 42.47PCh. 42 - Prob. 42.48PCh. 42 - Prob. 42.49PCh. 42 - Prob. 42.50PCh. 42 - Prob. 42.51PCh. 42 - Prob. 42.52PCh. 42 - Prob. 42.53CPCh. 42 - Prob. 42.54CPCh. 42 - Prob. 42.55CPCh. 42 - Prob. 42.56PPCh. 42 - Prob. 42.57PPCh. 42 - Prob. 42.58PP
Knowledge Booster
Similar questions
- The measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?arrow_forwardA p-n junction has a saturation current of 6.40 mA. (a) At a temperature of 300 K, what voltage is needed to produce a positive current of 40.0 mA? (b) For a voltage equal to the negative of the value calculated in part (a), what is the negative current?arrow_forwardSince the reverse (saturation) current passing through a p-n junction with an ideality factor of 1 at 32°C is 50 nA; What is the current in the right direction at a voltage of 0.5 V applied in the right (conduct) direction (feed forward)? A) 8.98 A B) 6.68 A C) 4.18 A D) 1.25 Aarrow_forward
- At room temperature under the forward bias of 0.15 V the current through a p-n junction is 1.66 mA. What will be the current through the junction under a reverse bias of 0.15 V at T=250K? Assume that the zero-bias current I, is independent of temperature in this range. 3.arrow_forwardIn a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmarrow_forward1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).arrow_forward
- The PN junction of II has a structure given by the following the P doping 1016cm³ N doping 108cm³, Wp =2x10-4cm WN=100x10-4cm Xno=.0032x104cm, xp0=.32x10-4 cm 1016 1018 2x104cm 100x10-4cmarrow_forwardDiode current and temperature. At normal operating conditions, the current-voltage relation for a diode (p-n semiconductor junction) is given by 1(V) - is (exp(27)-1) = Where kg = 8.617 x 10-5[eV/K] Given the saturation current is Is = 1.20 × 10-8 [A] and the forward bias current is I = 0.43 [A] for an applied voltage of V = 0.45 [V], what is the temperature (in [K]) of the diode?arrow_forwardShow that the average kinetic energy of a conduction elec- tron in a metal at 0 K is E the average kinetic energy is Ep. Suggestion: In general, avg 00 1 E, avg -| EN (E) dE n. Jo where n, is the density of particles, N(E) dE is given by Equation 42.20, and the integral is over all possible values of the energy.arrow_forward
- U:14)arrow_forwardA particular pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 10¹4 cm³ and N₁ = 2 × 10¹4 cm³. The thermal equilibrium hole concentration is po = 1.1 X 10¹4 cm-³. Consider the resistivity of the n-side is 40 -cm and of the p-side is 20 -cm. Assume complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 × 10-¹⁹ and the electric permittivity of the semiconductor s = 13.1€, with = 8.85 × 10-14 F/cm. Determine the depletion region width.?arrow_forwardDo it correctly.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax