The voltage level, which is required in NFPA 70E ® requirements for applying to energized circuit parts or electrical conductors.

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Chapter 4.2, Problem 2CP

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The voltage level, which is required in NFPA 70E® requirements for applying to energized circuit parts or electrical conductors.

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a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 K

4. Two different silicon samples maintained at 300K are characterized by the energy band diagrams. Answer the questions that follow after choosing a specific diagram for analysis. a) Do equilibrium conditions prebail? How do you know? b) Sketch the electrostatic potential (V) inside the semiconductor as a function of x. c) Sketch the electric field (ε) inside the semiconductor as a function of x. EF Ec E₁ Ev E₁ EF Ev X X 0 L/2 L 0 L/2 L 3.

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