1. What are the key steps involved in the fabrication of a semiconductor device. 2. You are hired by a chip manufacturing company, and you are asked to prepare a silicon wafer with the pattern below. Describe the process you would use. High Aspect Ratio Trenches Undoped Si Wafer P-doped Si 3. You would like to deposit material within a high aspect ratio trench. What approach would you use and why? 4. A person is setting up a small clean room space to carry out an outreach activity to educate high school students about patterning using photolithography. They obtained a positive photoresist, a used spin coater, a high energy light lamp for exposure and ordered a plastic transparency mask with a pattern on it to reduce cost. Upon trying this set up multiple times they find that the full resist gets developed, and they are unable to transfer the pattern onto the resist. Help them troubleshoot and find out why pattern of transfer has not been successful. 5. You are given a composite…

Two complex values are  z1=8 + 8i,  z2=15 + 7 i.  z1∗  and  z2∗ are the complex conjugate values. Any complex value can be expessed in the form of a+bi=reiθ. Find r and θ for (z1-z∗2)/z1+z2∗. Find r and θ for (z1−z2∗)z1z2∗   Please show all steps

An electromagnetic wave is traveling through vacuum in the positive x direction. Its electric field vector is given by E=E0sin⁡(kx−ωt)j^,where j^ is the unit vector in the y direction. If B0 is the amplitude of the magnetic field vector, find the complete expression for the magnetic field vector B→ of the wave.  What is the Poynting vector S(x,t), that is, the power per unit area associated with the electromagnetic wave described in the problem introduction? Give your answer in terms of some or all of the variables E0, B0, k, x, ω, t, and μ0. Specify the direction of the Poynting vector using the unit vectors i^, j^, and k^ as appropriate. Please explain all steps