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Essential University Physics: Volume 2 (3rd Edition)
3rd Edition
ISBN: 9780321976420
Author: Richard Wolfson
Publisher: PEARSON
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Question
Chapter 37, Problem 54P
To determine
The maximum current that can be carried in
Al
superconducting wire.
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Students have asked these similar questions
Hall coefficient of a specimen of depend silicon found to be 3.66×10m³/C.
The resistivity of the specimen is 8.93×10-32 m. Find the density of the charge
carriers (in electrons/m³) and the mobility in (m/V.s).
1.7e22, 0.04 O
1.8e22, 0.04 O
1.7e22, 0.05 O
1.8e22, 0.05 O
Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and
each Al atom creates a charge carrier.
Calculate the electrical conductivity of this material at room temperature, considering
that the electron and hole mobilities are respectively 0.1 and 0.05 m/V.s.
Please provide Handwritten answer
Chapter 37 Solutions
Essential University Physics: Volume 2 (3rd Edition)
Ch. 37.1 - Prob. 37.1GICh. 37.2 - If a scientist uses microwave technology to study...Ch. 37.3 - Prob. 37.3GICh. 37 - If you push two atoms together to form a molecule,...Ch. 37 - Prob. 2FTDCh. 37 - Prob. 3FTDCh. 37 - Does it make sense to distinguish individual NaCl...Ch. 37 - Prob. 5FTDCh. 37 - Prob. 6FTDCh. 37 - Radio astronomers have discovered many complex...
Ch. 37 - Prob. 8FTDCh. 37 - Prob. 9FTDCh. 37 - Prob. 10FTDCh. 37 - Prob. 11FTDCh. 37 - Prob. 12FTDCh. 37 - Prob. 13FTDCh. 37 - Prob. 14FTDCh. 37 - Prob. 15FTDCh. 37 - Prob. 16ECh. 37 - Prob. 17ECh. 37 - Prob. 18ECh. 37 - Prob. 19ECh. 37 - Prob. 20ECh. 37 - Prob. 21ECh. 37 - Prob. 22ECh. 37 - Prob. 23ECh. 37 - Prob. 24ECh. 37 - Prob. 25ECh. 37 - Prob. 26ECh. 37 - Prob. 27ECh. 37 - Prob. 28ECh. 37 - Prob. 29PCh. 37 - Prob. 30PCh. 37 - Prob. 31PCh. 37 - Prob. 32PCh. 37 - Prob. 33PCh. 37 - Prob. 34PCh. 37 - Prob. 35PCh. 37 - Prob. 36PCh. 37 - Prob. 37PCh. 37 - Prob. 38PCh. 37 - Prob. 39PCh. 37 - Prob. 40PCh. 37 - Prob. 41PCh. 37 - Prob. 42PCh. 37 - Prob. 43PCh. 37 - Prob. 44PCh. 37 - Prob. 45PCh. 37 - Prob. 46PCh. 37 - Prob. 47PCh. 37 - Prob. 48PCh. 37 - Prob. 49PCh. 37 - Prob. 50PCh. 37 - Prob. 51PCh. 37 - Prob. 52PCh. 37 - Prob. 53PCh. 37 - Prob. 54PCh. 37 - The critical field in a niobium-titanium...Ch. 37 - The transition from the ground state to the first...Ch. 37 - Prob. 57PCh. 37 - Prob. 58PCh. 37 - Youre troubled that Example 37.1 neglects the mass...Ch. 37 - Prob. 60PCh. 37 - The Madelung constant (Section 37.3) is...Ch. 37 - Prob. 62PCh. 37 - (a) Count the number of electron states N(E) with...Ch. 37 - Prob. 64PCh. 37 - Prob. 65PCh. 37 - Prob. 66PCh. 37 - Prob. 67PCh. 37 - Prob. 68PPCh. 37 - Prob. 69PPCh. 37 - Prob. 70PPCh. 37 - Prob. 71PP
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- a Bar of intrinsic -3 silicon having a cross-sectional area of 3x10-4 m² has an n; = 1.5×10¹6 m²³. If n = 0.14 m² /V.sand up = 0.05 m²/V.s, how long should the bar be in order that the current in it be 1.2 mA when 9 V is applied across its ends.arrow_forwardHand written solutions are strictly prohibited.arrow_forwardA. A sample of n-type germanium (Ge) contains 1023 ionised donors per cubic metre. Estimate the ratio at room temperature of the resistivity of this material to that of high purity intrinsic germanium. [given NeNh=10³8 m-6 for Ge.] B. Provide 2 examples of the application of p-n junctions, including explanation of how such junctions play an essential role.arrow_forward
- 1 (a) Using Townsend's second ionization criterion, consider I, 4 x 10-7 A. Consider a = 2.28/cm. If y = 0.0075, find the gap spacing dspark in cm for spark breakdown criterion. Calculate the current I in A for (i) d = 0.45 xdspark , (ii) d = 0.6 x dspark and (iii) d = 0.8 x dspark Show that the current I = Io exp (ad) when d is very small value and y is also very small value. 1,ead 1- y(ead – 1) (b) For a point-plane gaseous dielectric system, suppose values of a = 2.24 / cm and y = 0.0064. d Find the values of for d = 1.25 cm and d = 1.95 cm. ddarrow_forwardAn AL wire with an atomic mass of 26.98 g/mole with a cross sectional area of 4 x 10-6 /m2 carries a 5Acurrent. Find the drift velocity of the electrons in m/s through the wire, assuming that each Al atomcontributes an electron. The density of Al is 2.7 g/cm3.arrow_forwardQuestion-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.arrow_forward
- A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm? through this sample. Sample cross-sectional area is 0.1 cm?. Hn= 4000cm2/V-s H,= 1000 cm?/V-s. Calculate the majority carrier concentration. Please write your answer as a cm-3 and don't use units in the answer.arrow_forwardAssume that the conductivity of a pure semiconductor at an applied electric field of 450 mV/m is 2.75 X 1013/ S2-cm. Given that the drift velocity of electrons is 0.135 m/s and that of holes is 0.048 m/s, determine the density of the charge carriers per cubic meter in this material.arrow_forward3. For a Si bar of length 5um, doped n-type at 3x10¹ cm³, calculate the current density for an applied field of 3V across its length. Then do the same for a voltage of 3200V. You can assume that the electron and hole mobilities are 1500 and 500 cm²/V.s, respectively, in the ohmic region below 10¹V/cm and. For higher fields, both electrons and holes have a saturation velocity of 107cm/s.arrow_forward
- . Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close toarrow_forwardAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forwardA conductive wire has a conductivity of ( 0.649 × 10^-8) at room temperature are ( 5.8 x 1028) conduction electron/m.calculate the mobility,resistivity and relaxation time of electronsarrow_forward
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