Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN: 9781337900348
Author: Stephen L. Herman
Publisher: Cengage Learning
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Chapter 22, Problem 2PP
To determine

The missing values in the table.

Expert Solution & Answer
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Answer to Problem 2PP

ET = 54 V ER = 54 V EC = 54 V
IT = 2.5 A IR = 1.5 A IC = 2 A
Z = 21.6 Ω R = 36 Ω XC = 27 Ω
VA = 135 P = 81 W VARSC = 108
PF = 60 % ∠θ =53.13 ° C =14.736 µF

Explanation of Solution

Given data:

IC=2A  f=400 Hz  R = 36 Ω  Z = 21.6 Ω

The capacitive reactance XC is calculated as,

1Z2=1R2+1XC21XC2=1Z21R21XC2=121.6213621XC2=1466.56112961XC2=1296466.561296×466.561XC2=829.44604661.76Invert the ratio,XC2=604661.76829.44XC2=729Taking square root,XC=729     =27Ω

The value of the capacitor is,

C=12πfXc=12π×400×27=14.736 μF

The voltage drop across the capacitor,

EC=ICXC    =2×27    =54V

Since the circuit is parallel R-C,

EC=ER=ET=54 V

The current flowing through resistance IR will be,

IR=ERR=5436=1.5 A

The total current flowing in the parallel R-C network is,

IT=ETZ=5421.6=2.5 A

The apparent power VA is given as,

VA=ETIT    =54×2.5    =135

The true power P is given as,

P=ERIR    =54×1.5    =81 W

The reactive power VARSC is calculated as,

VARSC  = VA2P2             =1352812             = 108

Power factor (PF) is calculated as,

PF=PVA×100     =81135×100     =60 %

Power factor angle θ will be,

cosθ=0.6     θ=cos10.6     θ=53.13°

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a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 K
4. Two different silicon samples maintained at 300K are characterized by the energy band diagrams. Answer the questions that follow after choosing a specific diagram for analysis. a) Do equilibrium conditions prebail? How do you know? b) Sketch the electrostatic potential (V) inside the semiconductor as a function of x. c) Sketch the electric field (ε) inside the semiconductor as a function of x. EF Ec E₁ Ev E₁ EF Ev X X 0 L/2 L 0 L/2 L 3.
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