
(a)
Interpretation:
Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.
Concept introduction:
Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.
The SI unit of conductivity is siemens per meter (S/m).
P-type semiconductor:
When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.
N-type semiconductor:
When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.
(b)
Interpretation:
Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.
Concept introduction:
Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.
The SI unit of conductivity is siemens per meter (S/m).
P-type semiconductor:
When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.
N-type semiconductor:
When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.
(c)
Interpretation:
Germanium doped with indium has to be identified for p-type or n-type semiconductor.
Concept introduction:
Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.
The SI unit of conductivity is siemens per meter (S/m).
P-type semiconductor:
When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.
N-type semiconductor:
When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.
(d)
Interpretation:
Germanium doped with antimony has to be identified for p-type or n-type semiconductor.
Concept introduction:
Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.
The SI unit of conductivity is siemens per meter (S/m).
P-type semiconductor:
When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.
N-type semiconductor:
When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

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Chapter 12 Solutions
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- Indicate the products obtained if (E)-2-butenal and 3-oxo-butanenitrile are mixed with sodium ethoxide in ethanol.arrow_forwardQuestion 3 (4 points), Draw a full arrow-pushing mechanism for the following reaction Please draw all structures clearly. Note that this intramolecular cyclization is analogous to the mechanism for halohydrin formation. COH Br + HBr Brarrow_forwardIndicate the products obtained if 2,2-dimethylpropanal and acetaldehyde are mixed with sodium ethoxide in ethanol.arrow_forward
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