Germanium doped with arsenic has to be identified for p-type or n-type semiconductor. Concept introduction: Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity. The SI unit of conductivity is siemens per meter (S/m). P-type semiconductor: When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity. N-type semiconductor: When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Question

A solution of 14 g of a nonvolatile, nonelectrolyte compound in 0.10 kg of benzene boils at 81.7°C. If the BP of pure benzene is 80.2°C and the K, of benzene is 2.53°C/m, calculate the molar mass of the unknown compound. AT₁ = Km (14)

Answer 1

Question

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

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A solution of 14 g of a nonvolatile, nonelectrolyte compound in 0.10 kg of benzene boils at 81.7°C. If the BP of pure benzene is 80.2°C and the K, of benzene is 2.53°C/m, calculate the molar mass of the unknown compound. AT₁ = Km (14)

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Answer 2

Question

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

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Answer 3

Question

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

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Answer 4

Question

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

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Answer 5

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 6

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 7

Chapter 12, Problem 54GQ

(a)

Interpretation Introduction

Interpretation:

Germanium doped with arsenic has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 8

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 9

(b)

Interpretation Introduction

Interpretation:

Silicon doped with phosphorus has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 10

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 11

(c)

Interpretation Introduction

Interpretation:

Germanium doped with indium has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 12

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 13

(d)

Interpretation Introduction

Interpretation:

Germanium doped with antimony has to be identified for p-type or n-type semiconductor.

Concept introduction:

Conductivity of an electrolyte solution is a measurement of the amount of its ability to conduct electricity.

The SI unit of conductivity is siemens per meter (S/m).

P-type semiconductor:

When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as p-type semiconductor. Boron (B), Gallium (G), Indium (In), Aluminium (Al) etc. are trivalent impurities and which are called acceptor impurity.

N-type semiconductor:

When pentavalent impurity is added to an intrinsic or pure semiconductor (silicon or germanium) is called as n-type semiconductor. Phosphorus, arsenic, antimony etc are pentavalent impurities which are called donor impurity.

Answer 14

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Answer 25

Ch. 12.1 - (a) Determining an Atom Radius from Lattice...Ch. 12.1 - Prob. 1RC Ch. 12.1 - Prob. 2RC Ch. 12.2 - If an ionic solid has an fcc lattice of anions (X)...Ch. 12.2 - Potassium chloride has the same unit cell as NaCl....Ch. 12.2 - 1. The unit cell of silicon carbide. SiC is...Ch. 12.2 - If one edge of the silicon carbide unit cell is...Ch. 12.2 - Prob. 1Q Ch. 12.2 - Describe the unit cell of lithium (see Figure).Ch. 12.2 - Prob. 3Q

Solution Summary: The author explains that germanium doped with arsenic has to be identified for p-type semiconductor.

Chapter 12 Solutions