The smallest and largest areas that the field could be?

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A piece of silicon semiconductor has length L=0.01cm and cross-section in a square shape with an area of A=5×10−4cm2 . The semiconductor is doped with 1012cm−3 Phosphorus atoms and 1017cm−3 Boron atoms. An external electric field E=1.5×104N/C is applied to the silicon piece along the length direction, through the cross section. What is the total current in the silicon at T=300K? Assume the mobility of silicon is 1400cm2V−1s−1 for electrons and 450cm2V−1s−1 for holes, respectively. Assume the intrinsic carrier concentration in silicon is 1010cm−3 . Give your answer in mA, rounded to 3 significant figures. Just enter the number, nothing else.

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Chapter 1, Problem 53EAP

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The smallest and largest areas that the field could be?

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A piece of silicon semiconductor has length L=0.01cm and cross-section in a square shape with an area of A=5×10−4cm2 . The semiconductor is doped with 1012cm−3 Phosphorus atoms and 1017cm−3 Boron atoms. An external electric field E=1.5×104N/C is applied to the silicon piece along the length direction, through the cross section. What is the total current in the silicon at T=300K? Assume the mobility of silicon is 1400cm2V−1s−1 for electrons and 450cm2V−1s−1 for holes, respectively. Assume the intrinsic carrier concentration in silicon is 1010cm−3 . Give your answer in mA, rounded to 3 significant figures. Just enter the number, nothing else.

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